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Horizontal homojunction bipolar transistor and preparation method thereof

A bipolar transistor and homojunction technology, applied in the field of microelectronics, can solve the problem of low amplification factor, achieve high common emitter amplification factor, high amplification factor, and fewer types of materials

Pending Publication Date: 2021-04-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides a horizontal homojunction bipolar transistor and its preparation method, the purpose of which is to solve the technical problem of low amplification factor of the prior art

Method used

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  • Horizontal homojunction bipolar transistor and preparation method thereof
  • Horizontal homojunction bipolar transistor and preparation method thereof
  • Horizontal homojunction bipolar transistor and preparation method thereof

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preparation example Construction

[0040] In the second aspect, the present invention provides a method for preparing the above-mentioned horizontal homojunction bipolar transistor, and the corresponding process flow chart is as follows figure 2 shown, including the following steps:

[0041] S1. Select SiO on the upper surface 2 Oxide layer of P-type doped single crystal silicon as the substrate, in SiO 2 Preparation of N-type MoS on oxide layer 2 Thin film, obtains first sample;

[0042] Specifically, in this embodiment, there will be SiO on the surface 2 P-type doped single crystal silicon (thickness: 350 μm) with an oxide layer (thickness: 50 nm) was used as a substrate, and acetone was used to sonicate it for 5 minutes to remove organic impurities on its surface. Sonicate it with ethanol for 5 min to remove the acetone on its surface. Then it was ultrasonicated with deionized water for 5 min to remove the ethanol on its surface. Finally, use a nitrogen gun to remove the deionized water on its surface...

Embodiment 1

[0056] A method for preparing a horizontal homojunction bipolar transistor, comprising the following steps:

[0057] S1. Select SiO on the upper surface 2 Oxide layer of P-type doped single crystal silicon as the substrate, in SiO 2 Preparation of N-type MoS on oxide layer 2 Thin film, obtains first sample;

[0058] S2. Perform the first ultraviolet lithography on the surface of the first sample, and after development, part of the N-type MoS is obtained 2 Thin film exposed, part of N-type MoS 2 A second sample with the film covered by photoresist;

[0059] S3. Doping the obtained second sample by low-energy ion implantation method, and obtaining the third sample after degelling;

[0060] S4. Carry out the second UV lithography on the surface of the third sample, and after developing, part of the area is obtained as N-type MoS 2 Thin film, part of the area is P-type MoS 2 a fourth sample of film;

[0061] S5. Evaporating metal on the surface of the obtained fourth sampl...

Embodiment 2

[0064] A method for preparing a horizontal homojunction bipolar transistor, comprising the following steps:

[0065] S1. Select SiO on the upper surface 2 Oxide layer of P-type doped single crystal silicon as the substrate, in SiO 2 Preparation of N-type MoS on oxide layer 2 Thin film, obtains first sample;

[0066] S2. Perform the first ultraviolet lithography on the surface of the first sample, and after development, part of the N-type MoS is obtained 2 Thin film exposed, part of N-type MoS 2 A second sample with the film covered by photoresist;

[0067] S3. Doping the obtained second sample by low-energy ion implantation method, and obtaining the third sample after degelling;

[0068] S4. Carry out the second UV lithography on the surface of the third sample, and after developing, part of the area is obtained as N-type MoS 2 Thin film, part of the area is P-type MoS 2 a fourth sample of film;

[0069] S5. Evaporating metal on the surface of the obtained fourth sampl...

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Abstract

The invention discloses a horizontal homojunction bipolar transistor and a preparation method thereof, and belongs to the technical field of microelectronics, the horizontal homojunction bipolar transistor comprises P-type doped monocrystalline silicon, a SiO2 oxide layer, an N-type MoS2 film, a P-type MoS2 film and electrode layers; wherein the SiO2 oxide layer is located on the upper surface of the P-type doped monocrystalline silicon; the N-type MoS2 thin film and the P-type MoS2 thin film are both located on the upper surface of the SiO2 oxide layer, and the N-type MoS2 thin film and the P-type MoS2 thin film are transversely connected; wherein the electrode layers are respectively positioned on the upper surfaces of the N-type MoS2 film and the P-type MoS2 film, and the electrode layers are not connected with each other. The N-type MoS2 thin film and the P-type MoS2 thin film both take MoS2 as carriers, and the carriers are high in mobility and few in interface state, so that the corresponding horizontal homojunction bipolar transistor is high in amplification coefficient; besides, the horizontal homojunction bipolar transistor provided by the invention can be provided with a very small base region width, and the carrier concentration of the emitter region is far greater than the carrier concentration of the base region, so that a very high common emitter amplification coefficient is realized.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a horizontal homojunction bipolar transistor and a preparation method thereof. Background technique [0002] In recent years, two-dimensional transition metal dichalcogenides (TMDCs) have attracted extensive attention due to their excellent optical, acoustic, electrical, mechanical, and thermal properties. in MoS 2 As an example, the intrinsic MoS 2 It is an n-type semiconductor, and its bandgap width changes with the number of layers. Single-layer MoS 2 It is a direct bandgap semiconductor with a forbidden band width of 1.8eV. With MoS 2 With the increase of the number of layers, the forbidden band width gradually decreases to 1.2eV. MoS 2 With extremely high carrier mobility, monolayer MoS 2 The carrier mobility can reach 410cm 2 V -1 the s -1 , multilayer carrier mobility up to 500cm 2 V -1 the s -1 . [0003] A bipolar transistor (Bipolar...

Claims

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Application Information

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IPC IPC(8): H01L29/73H01L29/06H01L21/331H01L21/335
Inventor 曾祥斌王士博王文照胡一说陆晶晶肖永红周宇飞王曦雅王君豪陈铎许庭玮
Owner HUAZHONG UNIV OF SCI & TECH
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