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a nbge 2 Single crystal and its preparation method and application

A single crystal and single substance technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex preparation methods, research, low quality of single crystals, etc., to achieve broad application prospects, simple preparation methods, The effect of high crystal quality

Active Publication Date: 2022-02-22
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] NbG 2 It is a traditional superconducting material, but the magnetoresistance effect has not been discovered. For NbGe 2 Materials Around the 1970s and 1980s, foreign countries have reported the successful synthesis of NbGe 2 Single crystal material (J.P.REMEIKA, A.S.COOPER, Z.FISK and D.C. JOHNSTON.Journal of the Less-Cordon Metals, 62 (1978) 211-213), but its preparation method is too complicated, and the obtained single crystal size is too small ( 0.5×0.05×0.05mm 3 ), the residual resistivity RRR is also relatively low, where RRR is defined as RRR≡[ρ(300 K)-ρ(4K)] / ρ(4K), indicating that the quality of the single crystal is not good, so it lacks its intrinsic physical properties, so that for NbGe 2 The research on this material has been stagnant, which is also our starting point to seek to prepare higher-quality single crystals to study the intrinsic physical properties of this material. In our research practice, we also found that NbGe 2 It is difficult to grow a single crystal, the ratio of elements is not well controlled, and the temperature range is not well controlled, it is possible to grow compounds with other ratios such as NbGe 3 etc., resulting in poor single crystal quality

Method used

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  • a nbge <sub>2</sub> Single crystal and its preparation method and application
  • a nbge <sub>2</sub> Single crystal and its preparation method and application
  • a nbge <sub>2</sub> Single crystal and its preparation method and application

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Effect test

Embodiment 1

[0028] 1) Grinding Nb and Ge with a molar ratio of 1:2 in a glove box in an argon atmosphere for 20 min to obtain a mixed powder;

[0029]2) Put the above mixed powder in an alumina corundum sleeve, then seal the corundum in a evacuated quartz tube, and then put it into a box furnace to raise the temperature to 1073K at a heating rate of 2K / min. Calcined for 2 days;

[0030] 3) re-grind the calcined mixed powder in a glove box in an argon atmosphere, and grind it at 2 mg / cm 3 Add the appropriate concentration of I 2 , and encapsulate it in a 16cm vacuum glass tube, transport it for a week under the temperature difference of 1073K at the high temperature end and 973K at the low temperature end, and finally obtain NbGe at the cold end 2 single crystal.

Embodiment 2

[0032] 1) Grinding Nb and Ge with a molar ratio of 1:2 in a glove box in an argon atmosphere for 20 min to obtain a mixed powder;

[0033] 2) Put the above mixed powder in an alumina corundum sleeve, then seal the corundum in a evacuated quartz tube, and then put it into a box furnace to raise the temperature to 1173K at a heating rate of 3K / min. Calcined for 4 days;

[0034] 3) re-grind the calcined mixed powder in a glove box in an argon atmosphere, and grind it at 2 mg / cm 3 Add the appropriate concentration of I 2 , and encapsulate it in a 16cm vacuum glass tube, transport it for a week under the temperature difference of 1073K at the high temperature end and 973K at the low temperature end, and finally obtain NbGe at the cold end 2 single crystal.

Embodiment 3

[0036] 1) Grinding Nb and Ge with a molar ratio of 1:2 in a glove box in an argon atmosphere for 30min to obtain a mixed powder;

[0037] 2) Put the above mixed powder in an alumina corundum sleeve, then seal the corundum in a evacuated quartz tube, and then put it into a box furnace to raise the temperature to 1173K at a heating rate of 3K / min. Calcined for 4 days;

[0038] 3) re-grind the calcined mixed powder in a glove box in an argon atmosphere, and grind it at 2 mg / cm 3 Add the appropriate concentration of I 2 , and encapsulate it in a 16cm vacuum glass tube, transport it for a week under the temperature difference of 1073K at the high temperature end and 1023K at the low temperature end, and finally obtain NbGe at the cold end 2 single crystal.

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Abstract

The invention relates to a high-quality NbGe 2 Single crystal, the crystal is hexagonal, its space group is P 62 2 2 (No.180), the unit cell parameters are: a=b, the range is 5.002±0.001Å, the range of c is 6.834±0.002Å, α=β=90°, γ=120°, the unit cell volume is: (1.481±0.004)×10 ‑28 m 3 . The invention also relates to high quality NbGe 2 The preparation method of a single crystal, Nb and Ge are ground and mixed in an argon atmosphere, then vacuum calcined, and then the powder obtained and an appropriate amount of I 2 Mixed and packaged in a vacuum container, reacted with a temperature gradient of 3 K / cm~7 K / cm for 72~168 hours at the base temperature of 973 K~1023K at the low temperature end, and finally obtained NbGe at the low temperature end 2 single crystal, NbGe 2 Single crystal size can be 0.5×0.5×0.5mm 3 ~1.5×1.5×1.5mm 3 , the size of the residual resistivity RRR is 650~1100, and it also involves the application as a giant magnetoresistance material. NbGe prepared by the present invention 2 Single crystal is a new type of material with linear giant magnetoresistance effect, which can be used as a new giant magnetoresistance material and its preparation method is simple and easy to realize.

Description

technical field [0001] The present invention relates to NbGe 2 The field of materials and their preparation, specifically relating to a high-quality NbGe 2 Single crystal and its preparation method and application. Background technique [0002] The so-called magnetoresistance effect refers to the phenomenon that the resistance value of a conductor or semiconductor changes under the action of a magnetic field. Peter Grünberg and Albert Fert jointly won the 2007 Nobel Prize in Physics for their independent discovery of the giant magnetoresistance effect in materials in 1988. Because of their great application prospects in electromagnetic devices such as magnetic heads, magnetic sensors, magnetic switches, magnetic recording, and magnetoelectronics, they have aroused great interest, and their research has become an important part of physics and materials chemistry in recent years. a frontier field. [0003] Giant magnetoresistance materials can not only be used to expand th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/10C30B28/02C30B25/00H01L43/10
CPCC30B29/10C30B28/02C30B25/00H10N50/85
Inventor 许祝安吕柏江陶前李妙聪
Owner ZHEJIANG UNIV
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