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Solar cell electrode printing method

A technology for solar cells and printing methods, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as screen plate damage, unevenness, increased probability of battery cracking, etc., to improve the pass rate, improve accuracy, The effect of reducing the probability of cracking

Pending Publication Date: 2021-02-23
JA SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, after the power is increased, the location of the positioning point will be deeper, and the ablation of the positioning point will cause local unevenness, which will cause the screen of the back printing machine that prints the electric field paste on the back to be damaged, which will seriously affect the life of the screen. Too deep will also increase the probability of hidden cracks in the finished battery, affecting the battery fragmentation rate and customer satisfaction

Method used

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  • Solar cell electrode printing method

Examples

Experimental program
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Effect test

Embodiment 1

[0082] This embodiment provides a method for printing the back electrode of a solar cell, including the following steps:

[0083] S1. Cleaning and making texture: at a temperature of 80-90°C, put the silicon base in 3% to 5% NaOH solution for 2 minutes, clean the surface of the silicon base to remove the surface damage of the silicon wafer, and continue to place it in the NaOH solution for 10 minutes , the surface is textured to make pyramid suede, so as to increase the specific surface area to receive more photons, while reducing the reflection of incident light. The temperature and the concentration of NaOH solution are conventional settings. For the convenience of implementation, the setting temperature is 90°C, the concentration of NaOH solution is 5% during cleaning, the setting temperature is 80°C, and the concentration of NaOH solution is 3% during cashmere making.

[0084] S2. Diffusion: Put the texturized silicon wafer into a diffusion furnace, and at a temperature of...

Embodiment 2

[0100] This embodiment provides a method for printing the back electrode of a solar cell, the steps are similar to those in Embodiment 1, the only difference being:

[0101] S7. Coating: In this embodiment, plate-type PECVD is used for coating, and a silicon nitride film is coated on the surface of the silicon wafer after the alkali polishing treatment, specifically including:

[0102] In the plate type PECVD, the silicon nitride film is coated on the surface of the silicon wafer after alkali polishing. blue. The front film process remains unchanged.

[0103] S8. Laser slotting: the positioning point power or frequency of the laser slotting equipment used in this embodiment cannot be adjusted separately. Set the position graph speed of the positioning point on the back to 1150mm / s, the power of the positioning point on the back is 5W, and the frequency is 12KHz , so that the back anchor points are white.

[0104] According to statistics on the production of solar cell sheet...

Embodiment 3

[0106] This embodiment provides a method for printing the back electrode of a solar cell, the steps are similar to those in Embodiment 1, the only difference being:

[0107] S7. Coating: In this embodiment, plate-type PECVD is used for coating, and a silicon nitride film is coated on the surface of the silicon wafer after the alkali polishing treatment, specifically including:

[0108] In the plate type PECVD, the silicon nitride film is coated on the surface of the silicon wafer after alkali polishing. blue. The front film process remains unchanged.

[0109] S8. Laser slotting: the power or frequency of the positioning point of the laser slotting equipment used in this embodiment cannot be adjusted separately. The position graph speed of the positioning point on the back is set to 1125mm / s, the power of the positioning point on the back is 4W, and the frequency is 15KHz. , so that the back anchor points are white.

[0110] Statistics were made on the production of solar ce...

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Abstract

The invention discloses a solar cell electrode printing method. The method comprises the following steps of cleaning and texturing, diffusion, laser doping, oxidation, back oxide layer removal, alkalipolishing, film coating, laser grooving and printing, a silicon nitride film is plated on the surface of a silicon wafer during film coating, and the thickness of the back silicon nitride film is 70-80 nm; laser grooving is carried out on the back face of the silicon wafer to obtain a positioning point, the vertical distance between the highest point of a fusion protrusion of the positioning point and the back face of the silicon wafer is not larger than 10 [mu]m, and a red light lamp is adopted in a printing machine for printing back face electric field slurry. When the method is used in laser grooving, local ablation and the protruding degree caused by positioning point punching are reduced by setting relevant technological parameters of the positioning points on the back face of the silicon wafer, so that the subfissure probability of a battery piece is reduced, and damage of the positioning points to a screen printing plate of a printing machine is reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a solar cell sheet electrode printing method. Background technique [0002] With the rapid development of crystalline silicon battery technology, alkali polishing technology has been fully promoted. The advantages of alkali polishing technology include: 1. The reflectivity of the back surface is improved, and the long-wave absorption is increased. Current and opening pressure; 2. Sodium hydroxide is used instead of HF and nitric acid to save the treatment cost of sewage fluorine and nitrogen. The cost of alkali throwing is only 25% of that of acid throwing, while protecting the environment. [0003] Alkali polishing principle: Silicon oxide is used as a protective layer on the front of the silicon wafer, and high-concentration alkali (25%-40%) is used to polish the back to form a smooth back surface. Since the reflectivity on the back of the silicon wafer increases...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/1804H01L31/022425Y02E10/547Y02P70/50
Inventor 张建军刘苗王贵梅
Owner JA SOLAR
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