Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An etching liquid for through-hole or recess etching on a substrate and its preparation method and use

An etching solution and substrate technology, applied in chemical instruments and methods, surface etching compositions, semiconductor/solid-state device manufacturing, etc., can solve problems such as excessive hydrofluoric acid etching, achieve efficient etching, strengthen etching, and reduce surface tension. Effect

Active Publication Date: 2022-04-22
泰极微技术(苏州)有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, hydrofluoric acid is highly corrosive and volatile, and this type of glass etching process using hydrofluoric acid has high requirements for the sealing and ventilation of the etching environment. Further, hydrofluoric acid still has etching during use. excessive problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] This embodiment provides an etching solution for etching through holes or recesses on a substrate, the etching solution includes alkali, alcohol and solvent water;

[0039] Sodium hydroxide in the etching solution is 35% by mass percent;

[0040] Ethanol in the etching solution is 13% by volume fraction.

[0041] Prepared by the following method:

[0042] Mix the sodium hydroxide solution and ethanol according to the proportion to obtain the etching solution.

Embodiment 2

[0044] This embodiment provides an etching solution for etching through holes or recesses on a substrate, the etching solution includes alkali, alcohol and solvent water;

[0045] Sodium hydroxide in the etching solution is 20% by mass percent;

[0046] Ethanol in the etching solution is 18% by volume fraction.

[0047] Prepared by the following method:

[0048] Mix the sodium hydroxide solution and ethanol according to the proportion to obtain the etching solution.

Embodiment 3

[0050] This embodiment provides an etching solution for etching through holes or recesses on a substrate, the etching solution includes alkali, alcohol and solvent water;

[0051] Sodium hydroxide in the etching solution is 47% by mass percentage;

[0052] The ethanol in the etching solution is 7% by volume fraction.

[0053] Prepared by the following method:

[0054]Mix the sodium hydroxide solution and ethanol according to the proportion to obtain the etching solution.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an etching liquid for through-hole or recess etching on a substrate and its preparation method and use. The etching liquid includes alkali, alcohol and solvent water; the alkali in the etching liquid is 20-50 in terms of mass percentage. %; the volume fraction of alcohol in the etching solution is 5-20%. The etching solution provided by the present invention achieves efficient etching of a specific area of ​​the substrate by introducing a specific alcohol component, and avoids the over-etching problem caused by the hydrofluoric acid etching solution. The introduction of alcohol reduces the surface tension of the etching solution, making it easier for the etching solution to penetrate into the microstructure of the glass surface, accelerating etching. Furthermore, the addition of alcohol can promote material exchange between the etching solution and the substrate, accelerating the etching reaction.

Description

technical field [0001] The invention relates to the field of basic etching, in particular to an etching solution for etching through holes or recesses on a substrate, a preparation method and application thereof. Background technique [0002] At present, the introduction of through holes or recesses on substrates used as interposers or micro components is usually achieved by a process of mask + hydrofluoric acid chemical etching or laser irradiation + hydrofluoric acid chemical etching. [0003] For example, CN105102177A discloses a method and a device for introducing a plurality of recesses (5) in a substrate (2) used as an interposer by means of a laser beam, and a substrate (2) manufactured in this way. To this end, a laser beam (3) is directed onto the surface of the substrate (2). In this case, the exposure duration of the laser beam (3) is chosen to be extremely short, so that only a modification of the substrate (2) concentrically around the optical axis (Z) of the l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/02H01L21/306C03C15/00
CPCC09K13/02H01L21/30604C03C15/00
Inventor 张轶鸣
Owner 泰极微技术(苏州)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products