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Method of forming semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor device formation, can solve the problems such as the electrical performance of semiconductor devices needs to be improved, and achieve the effects of alleviating the instability effect of negative bias voltage, high uniformity of thickness, and avoiding over-etching problems.

Active Publication Date: 2019-07-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0006] However, the electrical performance of semiconductor devices formed by existing technologies still needs to be improved

Method used

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  • Method of forming semiconductor device
  • Method of forming semiconductor device
  • Method of forming semiconductor device

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Embodiment Construction

[0034] It can be seen from the background art that the electrical performance of semiconductor devices formed in the prior art needs to be improved.

[0035] In one embodiment, when the semiconductor device includes a core device and peripheral devices, in order to meet the different requirements of the core device and peripheral devices on the thickness of the gate dielectric layer, the process steps of forming the semiconductor device include: step S1, providing a core device region and The base of the peripheral device area, forming an oxide layer on the surface of the base; step S2, forming a photoresist layer on the surface of the oxide layer in the peripheral device area; step S3, using the photoresist layer as a mask, etching Removing the oxide layer located in the core device area; then removing the photoresist layer; step S4, forming a gate dielectric film on the surface of the oxide layer in the peripheral device area and the base surface of the core device area, and ...

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Abstract

A method of forming a semiconductor device comprises the following steps: providing a substrate including a first region and a second region; forming an oxide film covering the surface of the substrate and a nitrogen oxide film covering the surface of the oxide film; performing nitrogen ion diffusion weakening chemical treatment on the surface of the nitrogen oxide film; after nitrogen ion diffusion weakening chemical treatment, forming a photoresist layer on the surface of the nitrogen oxide film in the first region; performing etching with the photoresist layer as a mask to remove the nitrogen oxide film and the oxide film in the second region; removing the photoresist layer; forming a gate dielectric film on the surface of the nitrogen oxide film in the first region and on the surface of the substrate in the second region; and forming a gate conductive film on the surface of the gate dielectric film. While negative bias temperature instability is avoided, the problem of photoresist poisoning is avoided, different requirements of core devices and peripheral devices for the thickness of the gate dielectric layer are met, and the electrical performance and yield of the formed semiconductor device are improved.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] Semiconductor devices can be mainly divided into core (Core) devices and peripheral (I / O) devices (or called input / output devices) according to functional distinctions. According to the electrical type of semiconductor devices, core devices can be divided into core NMOS devices and core PMOS devices, and input / output devices can be divided into input / output NMOS devices and input / output PMOS devices. [0003] Usually, the operating voltage of the input / output device is much higher than that of the core device. In order to prevent problems such as electrical breakdown, when the operating voltage of the device is higher, the thickness of the gate dielectric layer of the device is required to be thicker, so , the thickness of the gate dielectric layer of the input / output device is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238
Inventor 刘焕新杨志勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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