Preparation method of silicon carbide coating graphite base

A silicon carbide coating and graphite base technology, applied in the field of semiconductors, can solve the problems affecting the use of the graphite base and the performance of the coating, and achieve the effects of high compactness, improved thermal shock resistance and dense structure

Pending Publication Date: 2021-02-19
湖南中科顶立技术创新研究院有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, due to the high boiling point of silicon, the silicon vapor introduced as the reaction gas is very likely to condense into simple silicon, resulting in the resulting coating being doped with certain impurities and affecting the performance of the coating, thereby affecting the graphite base. usage of

Method used

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  • Preparation method of silicon carbide coating graphite base
  • Preparation method of silicon carbide coating graphite base
  • Preparation method of silicon carbide coating graphite base

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Such as figure 1 As shown, this embodiment provides a method for preparing a silicon carbide-coated graphite base, which specifically includes the following steps:

[0031] S1. Graphite base pretreatment: Polish the graphite base, then place it in alcohol, clean it with ultrasonic waves for 20-40 minutes, and finally put it in an oven and dry it at 100°C for 30 minutes; after the pretreatment, the graphite The base is placed above the graphite gas distribution plate in the vacuum furnace;

[0032] S2, CVR deposition: Si powder and SiO 2 The powder is mixed in a molar ratio of 1:1, placed at the bottom of the graphite crucible, and then the graphite crucible is placed in a vacuum furnace to prevent SiO 2 The powder remains, and the mass of Si powder is 6% more; the vacuum furnace is vacuumed and argon is introduced, and the temperature is raised to 1850°C at a rate of 10-15°C / min in the argon atmosphere, and then the micro positive pressure Under the heat preservation...

Embodiment 2

[0039] Such as figure 1 As shown, this embodiment provides a method for preparing a silicon carbide-coated graphite base, which specifically includes the following steps:

[0040] S1. Graphite base pretreatment: Polish the graphite base, then place it in alcohol, clean it with ultrasonic waves for 20-40 minutes, and finally put it in an oven and dry it at 100°C for 30 minutes; after the pretreatment, the graphite The base is placed above the graphite gas distribution plate in the vacuum furnace;

[0041] S2, CVR deposition: Si powder and SiO 2 The powder is mixed in a molar ratio of 1:1, placed at the bottom of the graphite crucible, and then the graphite crucible is placed in a vacuum furnace to prevent SiO 2 The powder remains, and the mass of Si powder is 5% more; after vacuumizing the vacuum furnace, argon gas is introduced, and the temperature is raised to 1950 °C at a rate of 10-15 °C / min in the argon atmosphere, and then the micro positive pressure Under the heat pre...

Embodiment 3

[0044] Such as figure 1 As shown, this embodiment provides a method for preparing a silicon carbide-coated graphite base, which specifically includes the following steps:

[0045] S1. Graphite base pretreatment: Polish the graphite base, then place it in alcohol, clean it with ultrasonic waves for 20-40 minutes, and finally put it in an oven and dry it at 100°C for 30 minutes; after the pretreatment, the graphite The base is placed above the graphite gas distribution plate in the vacuum furnace;

[0046] S2, CVR deposition: Si powder and SiO 2 The powder is mixed in a molar ratio of 1:1, placed at the bottom of the graphite crucible, and then the graphite crucible is placed in a vacuum furnace to prevent SiO 2 The powder remains, and the quality of Si powder is 10% more; the vacuum furnace is vacuumed and argon is introduced, and the temperature is raised to 2050 °C at a rate of 10-15 °C / min in the argon atmosphere, and then the micro positive pressure Under the heat preser...

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Abstract

The invention discloses a preparation method of a silicon carbide coating graphite base. The method comprises the following steps: pretreating a graphite base, and putting the pretreated graphite baseon a graphite shunting disc; carrying out CVR deposition, wherein high-purity Si powder and high-purity SiO2 powder are mixed and placed in a vacuum furnace, the vacuum furnace is vacuumized, the temperature is increased to 1850-2050 DEG C in an argon atmosphere, a heat preservation reaction is conducted for 2-4 h, and a SiC matrix layer is generated on the surface of the graphite base; and carrying out CVD deposition, wherein the temperature of the vacuum furnace is reduced to 1050-1200 DEG C, then a CH3SiCl3-H2-Ar reaction gas source system is introduced, a heat preservation reaction is conducted for 10-30 h, and a SiC outer layer is formed on the SiC base body layer formed in the step S2. According t o the invention, the silicon carbide coating obtained through the preparation method is tightly combined with the graphite base, obvious layering is avoided, and the coating is high in purity and compactness, so that the thermal shock resistance of the graphite base is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a silicon carbide-coated graphite base. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that converts electrical energy into light energy. LED light source has the characteristics of low energy consumption, strong applicability, strong stability, fast response, environmental protection and no pollution. With the continuous development of today's technology, LED has been widely used in the fields of display, TV lighting decoration and lighting. An important process when making LEDs is silicon epitaxy, in which wafers are carried on graphite susceptors. The performance and quality of the susceptor play a vital role in the quality of the wafer epitaxial layer. Silicon carbide coated graphite base has unique advantages: high purity, uniform density, and excell...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/87
CPCC04B41/87C04B41/009C04B41/5059C04B35/522C04B41/4531C04B41/4556
Inventor 戴煜吴建王林静王卓健
Owner 湖南中科顶立技术创新研究院有限公司
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