Self-assembled bipolar organic field effect transistor memory and preparation method thereof

A self-assembly, organic field technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problem of poor performance reproducibility of OFET devices, difficult OTS monolayer surface roughness reproducibility, and inability to guarantee OTS problems such as the surface quality of the single-layer film, to achieve the effect of reducing the difficulty of preparation, good storage performance, and easy operation

Active Publication Date: 2021-01-22
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Octadecyltrichlorosilane (OTS) is widely used in the surface modification of organic semiconductor materials as a surfactant for modifying the surface of the medium, which greatly improves the performance of organic semiconductor devices. However, in the existing prepared devices, Due to the influence of the three active Cl-Si groups in octadecyltrichlorosilane, the surface quality (especially the surface roughness) of the OTS monolayer film prepared by it cannot be guaranteed, which leads to the performance of OFET devices. Poor reproducibility, therefore, it is difficult to ensure high reproducibility of the surface roughness of the OTS monolayer film by conventional solution or steam modification methods

Method used

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  • Self-assembled bipolar organic field effect transistor memory and preparation method thereof
  • Self-assembled bipolar organic field effect transistor memory and preparation method thereof
  • Self-assembled bipolar organic field effect transistor memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0036] (1) Prepare polystyrene (PS) solution with a concentration of 3 mg / mL, which needs to be prepared at least 12 hours in advance to ensure that the polystyrene is fully dissolved; prepare octadecyltrichlorosilane (OTS solution) with a concentration of 3 mg / mL ; Low boiling point solvents are toluene without additional treatment;

[0037] (2) Select a heavily doped silicon wafer as the substrate, and sequentially form a gate electrode and a gate insulating layer on the substrate. The gate electrode is made of n-type doped silicon material, and the gate insulating layer is made of SiO 2 , with a thickness of 50nm, to make a substrate; place the substrate in a beaker, add acetone to immerse the silicon wafer substrate, ultrasonicate for 15 minutes, and pour off the acetone; then add ethanol and deionized water, and repeat the treatment of the silicon wafer substrate with acetone same operation. Then dry the surface with nitrogen and place it in an oven at 120°C for 30 minut...

Embodiment 2

[0044] (1) Prepare polystyrene (PS) solution with a concentration of 2mg / mL, which needs to be prepared at least 12 hours in advance to ensure that the polystyrene is fully dissolved; prepare octadecyltrichlorosilane (OTS solution) with a concentration of 2mg / mL ; Low boiling point solvents are toluene without additional treatment;

[0045] (2) Select a heavily doped silicon wafer as the substrate, and form a gate electrode and a gate insulating layer sequentially on the substrate. The gate electrode is made of aluminum, and the gate insulating layer is made of aluminum oxide with a thickness of 100 nm to make the substrate; Place the substrate in a beaker, add acetone to immerse the silicon wafer substrate, sonicate for 15 minutes, and pour off the acetone; then add ethanol and deionized water, and repeat the same operation as when treating the silicon wafer substrate with acetone. Then dry the surface with nitrogen and place it in an oven at 120°C for 30 minutes to dry the s...

Embodiment 3

[0052] (1) Configure polymethyl methacrylate (PMMA) solution with a concentration of 4 mg / mL, which needs to be prepared at least 12 hours in advance to ensure that polystyrene is fully dissolved; configure octadecyltrichlorosilane (OTS solution) with a concentration of 4mg / mL; low boiling point solvents are toluene without additional treatment;

[0053] (2) Select a heavily doped silicon wafer as the substrate, and form a gate electrode and a gate insulating layer sequentially on the substrate. The gate electrode is made of copper, and the gate insulating layer is made of polyvinylpyrrolidone with a thickness of 150nm to make the substrate; Place the substrate in a beaker, add acetone to immerse the silicon wafer substrate, sonicate for 15 minutes, and pour off the acetone; then add ethanol and deionized water, and repeat the same operation as when treating the silicon wafer substrate with acetone. Then dry the surface with nitrogen and place it in an oven at 120°C for 30 min...

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Abstract

The invention discloses a self-assembled bipolar organic field effect transistor memory and a preparation method thereof. The memory sequentially comprises a source and drain electrode, an organic semiconductor layer, a gate insulating layer and a substrate from top to bottom. A charge trapping layer is arranged between the organic semiconductor layer and the gate insulating layer; the charge trapping layer is a nano columnar film formed by self-assembly of octadecyltrichlorosilane and a polymer with a high dielectric constant. According to the preparation method, the two polymer solutions arecombined and self-assembled to construct the structure of the nano column, so that the transmission of charge hole carriers is realized to achieve bipolar information storage. Meanwhile, the difficulty of preparing the ultra-smooth OTS layer is reduced through self-assembly of the mixed two polymers, compared with an ultra-smooth OTS thin film transistor memory, the transistor memory formed through mixed self-assembly shows obvious charge stability, and good storage performance and device maintenance performance are achieved on the premise that various transistor performance parameters are guaranteed.

Description

technical field [0001] The invention relates to an organic field effect transistor memory, in particular to an organic field effect transistor memory with bipolar storage performance through self-assembly processing and a preparation method thereof. Background technique [0002] As a basic storage technology device, organic field effect transistor memory is very suitable for memory because of its light weight, low cost, low temperature and large area processing, easy compatibility with flexible substrates, green preparation and convenient recycling. future development needs. In organic field-effect transistors (OFETs), charge transfer usually mainly occurs at the dielectric / semiconductor interface, so the properties of the dielectric / semiconductor interface determine the performance of the device. Self-assembled monomolecular film (SAM) is used to modify the dielectric surface. The quality of the dielectric / semiconductor interface can be improved, and charge trapping and sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/466Y02E10/549
Inventor 仪明东郭云李佳钰陈叶钱扬周
Owner NANJING UNIV OF POSTS & TELECOMM
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