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Silicon-based interdigital electrode based on porous silicon, and manufacturing method of silicon-based interdigital electrode

A technology of interdigital electrodes and manufacturing methods, applied in chemical instruments and methods, silicon oxide, silicon compounds, etc., can solve the problems of small surface and insufficient bonding, and achieve improved surface roughness and surface-to-surface ratio, good compatibility performance, and the effect of reducing manufacturing costs

Active Publication Date: 2021-01-22
ZUNYI NORMAL COLLEGE
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is always the shortcoming that the surface is relatively small and the combination is not tight enough.

Method used

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  • Silicon-based interdigital electrode based on porous silicon, and manufacturing method of silicon-based interdigital electrode
  • Silicon-based interdigital electrode based on porous silicon, and manufacturing method of silicon-based interdigital electrode
  • Silicon-based interdigital electrode based on porous silicon, and manufacturing method of silicon-based interdigital electrode

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Embodiment Construction

[0034] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0035] Refer to attached Figure 1-2 A silicon-based interdigitated electrode based on porous silicon is shown, including a silicon substrate 101, a porous silicon layer 102, a gold microstrip interdigitated electrode 103, a silicon oxide layer 104, and an input / output interface 105;

[0036] The silicon substrate 101 is an ordinary P100 type silicon wafer, the resistivity is 0.05Ωcm; the thickness of the silicon substrate is 400um.

[0037] Further, the porous silicon layer 102 is located above the silicon substrate 101, and the porous silicon layer 102 matches the shape of the gold microstrip interdigitated electrode 103; the thickness of the porous silicon layer 102 is 5 micron, the porosity is 60%, and the pore...

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Abstract

The invention discloses a silicon-based interdigital electrode based on porous silicon, and a manufacturing method of the silicon-based interdigital electrode. The silicon-based interdigital electrodecomprises a silicon substrate, a porous silicon layer, a gold microstrip interdigital electrode, a silicon oxide layer and input / output interfaces, wherein the porous silicon layer is located above the silicon substrate, and is matched with the gold microstrip interdigital electrode in shape, the silicon oxide layer is located between the porous silicon layer and the gold microstrip interdigitalelectrode, and the two ends of the gold microstrip interdigital electrode are provided with input / output interfaces. According to the invention, common low-resistance P-type silicon is used as a substrate so as to effectively reduce the preparation cost of the device, and the prepared porous silicon structure can significantly improve the surface roughness and the surface-to-surface ratio of the device so as to improve the electrical properties of the electrode; and the manufacturing cost is also reduced.

Description

technical field [0001] The invention relates to the technical field of fine circuits, in particular to a silicon-based interdigital electrode based on porous silicon and a manufacturing method thereof. Background technique [0002] Interdigitated electrodes refer to electrodes with periodic patterns in the shape or comb shape, which are ultra-fine circuits obtained by electrochemical processing. As the core component of electrical signal transmission, it is widely used in biomedical testing, environmental online monitoring, food safety testing, safety monitoring and other important fields. [0003] The traditional planar silicon-based interdigitated electrodes or SOI silicon-based interdigitated electrodes are well applied in the field of sensors, but the combination with composite gas-sensing materials is not perfect, and cannot form a better composite structure, and the performance of the device cannot be improved. further improvement. [0004] In the past ten years, wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30C01B33/021C01B33/113C25F3/12C23C14/24C23C14/18
CPCG01N27/30C01B33/021C01B33/113C25F3/12C23C14/24C23C14/18Y02P70/50
Inventor 钟福如杨艳军黄成强
Owner ZUNYI NORMAL COLLEGE
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