Nitrogen-doped p-type transparent conductive beznos thin film and its preparation method and application

Abstract

The invention provides a nitrogen-doped p-type transparent conductive BeZnOS film and its preparation method and application. The preparation method includes: preparing a BeZnOS ceramic target; providing a substrate, and placing the substrate in a vacuum chamber of a pulsed laser deposition system In the process, nitric oxide gas is introduced into the vacuum cavity, and the nitrogen-doped BeZnOS film is grown on the substrate by using the BeZnOS ceramic target material and the method of pulsed laser ablation deposition; the obtained nitrogen-doped BeZnOS The thin film is annealed at a temperature of 400-750° C. to obtain a nitrogen-doped p-type transparent conductive BeZnOS thin film. In the preparation method of the present invention, doping Be and S in ZnO to form a BeZnOS alloy can continuously adjust its energy band structure and electronic structure while maintaining the hexagonal structure of ZnO, more stable Be-N bonds and higher valence band tops Can reduce N o energy level, increasing N o stability.

Description

technical field [0001] The invention relates to the technical field of p-type transparent conductive thin films, in particular to a nitrogen-doped p-type transparent conductive BeZnOS thin film and its preparation method and application. Background technique [0002] At present, the international reports that can be used as p-type ZnO doping elements include group V elements N, P, As, etc., and group I elements Li, Na, etc., among which Li ions have a small radius and are easy to occupy the lattice gap to form donor impurities. It is conducive to the realization of p-type conductivity. Among the group V elements, the size of N atoms is similar to that of O atoms, and the N acceptor energy level in ZnO is relatively shallow. It has always been considered as the most promising p-type dopant. However, due to the low solubility of N in ZnO and the o unstable, it is difficult to achieve stable p-type conduction. [0003] For the current N-doped ZnO N o It is necessary to impro...

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Problems solved by technology

[0002] At present, the international reports that can be used as p-type ZnO doping elements include group V elements N, P, As, etc., and group I elements Li, Na, etc., among which Li ions have a small radius and are easy to occupy the lattice gap to form donor impurities. It is conducive to the realization of p-type conductivity. Among the group V elements, the size of N atoms is similar to that of O atoms, and the energy level of N acceptors in ZnO is shallow. It has always been considered as the most promising p-type dopant

However, due to the low solubility of N in ZnO and the o unstable, it is difficult to achieve stable p-type conduction

[0003] For the current N-doped ZnO N o It is necessary to improve the problem of unstable acceptor and low solubility of N

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