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Two-dimensional perovskite solar cell with high photoelectric conversion rate and preparation method

A photoelectric conversion rate, solar cell technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems that the photoelectric conversion efficiency of solar cells cannot meet the actual use requirements, cannot meet the actual use requirements, and the photoelectric conversion efficiency is low, reaching Effects of avoiding tissue defects, preventing workpiece deformation, and improving photoelectric conversion rate

Pending Publication Date: 2020-11-13
GUIZHOU EDUCATION UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, the perovskite structure material refers to any calcium titanate CaTiO 3 Materials with the same crystal structure, experiments found that when the metal halide material forms a perovskite structure, it is very effective as a collection layer in photovoltaic solar cells, and can successfully convert solar energy into electrical energy. Based on this discovery, in 2009 , Perovskite structure materials are officially used in thin film solar cells. In the next few years, perovskite structure materials have made great progress in the field of photovoltaics, and the photoelectric conversion rate has continued to increase, especially metal halides. Perovskite-like materials, whose raw materials are generally cheap lead, halogen, and amine salts, have a wide range of sources, and their manufacturing costs are lower than those of previous silicon-based materials. In terms of photoelectric conversion rate, it has grown from the initial 3.8% to 15.9%. It took less than 5 years to gradually approach the efficiency of silicon-based photovoltaic materials. At present, the certified efficiency of perovskite solar cells has reached 23.7%, so solar cells using photovoltaic materials with perovskite structures will be able to Completely replace the traditional solar cells using silicon-based photovoltaic materials; however, problems such as low repeatability and poor stability of perovskite solar cells are still the biggest obstacles to its commercial application process, because perovskite moisture absorption will cause perovskite room temperature conditions It is unstable under the environment, chemical reactions will occur in the oxygen environment, and then the crystal structure will be destroyed. After a period of use, there will be obvious efficiency attenuation. At present, it is found that the two-dimensional perovskite material has better stability than the three-dimensional perovskite battery. , but its photoelectric conversion efficiency is relatively low
Existing documents use a special mixed solution to heat and spin-coat to prepare a low-dimensional tin-based perovskite film. The photoelectric conversion efficiency of the solar cell obtained has been improved to a certain extent, but it still cannot meet the actual use requirements.
[0003] Through the above analysis, the problems and defects of the existing technology are as follows: the low-dimensional tin-based perovskite film is currently prepared by heating and spinning with a special mixed solution, and the photoelectric conversion efficiency of the prepared solar cell still cannot meet the actual use requirements.

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  • Two-dimensional perovskite solar cell with high photoelectric conversion rate and preparation method
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  • Two-dimensional perovskite solar cell with high photoelectric conversion rate and preparation method

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preparation example Construction

[0055] Such as figure 1 As shown, the preparation method of the two-dimensional perovskite solar cell with high photoelectric conversion rate provided by the embodiment of the present invention includes the following steps:

[0056] S101, covering the single crystal silicon sheet on the bottom conductive electrode layer to form a single crystal silicon layer;

[0057] S102, depositing the electron transport layer on the single crystal silicon layer by vapor deposition, and performing annealing treatment;

[0058] S103, dissolving nickel nitrate in ethanol, spin-coating on the conductive substrate, and heating to obtain a hole transport layer;

[0059] S104, dissolving the lead-based material and the two-dimensional perovskite precursor material in methanol to obtain a mixed solution; transferring the mixed solution to a heating plate for heating to generate a mixed single crystal; dissolving the mixed single crystal in isopropanol, Obtain a mixed single crystal precursor sol...

Embodiment 1

[0098] The glass substrate was ultrasonically treated in deionized water and dried with nitrogen; the silver nanowires were dispersed in isopropanol, and a sulfonate surfactant was added to prepare the silver nanowire ink; the silver nanowire ink was coated on On the glass substrate, a silver nanowire film is formed; the glass substrate and the silver nanowire film are treated to enhance conductivity; the silver nanowire film is covered with a layer of polymethacrylate, and cured in an oven; the silver nanowire The wire film is peeled off the glass substrate to obtain the bottom conductive electrode layer.

[0099] A single crystal silicon sheet is covered on the bottom conductive electrode layer to form a single crystal silicon layer.

[0100] Dissolve the precursor of the electron transport medium in ethanol, and place the solution in the atomizer; the solution is atomized through the atomizer, and sprayed into the high-temperature atmosphere in the form of a mist; the solve...

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Abstract

The invention belongs to the technical field of cell preparation, and discloses a two-dimensional perovskite solar cell with a high photoelectric conversion rate and a preparation method, and the preparation method of the two-dimensional perovskite solar cell with the high photoelectric conversion rate comprises the steps: covering a monocrystalline silicon wafer on a bottom conductive electrode layer; depositing an electron transport layer on the monocrystalline silicon layer, and carrying out annealing; dissolving nickel nitrate in ethanol, spin-coating the solution on a conductive substrate, and carrying out heating; dissolving a lead-based material and a two-dimensional perovskite precursor material in methanol, heating the materials to dissolve the materials in isopropanol; spin-coating the materials to a hole transport layer, and carrying out heating to obtain a perovskite layer; and evaporating an electrode layer on the surface of the perovskite layer to obtain the two-dimensional perovskite solar cell with high photoelectric conversion rate. According to the invention, the single crystal is prepared from the lead-based material and the two-dimensional perovskite precursor material, and has high stability; the defect of poor photoelectric conversion rate of the two-dimensional perovskite material is overcome by compounding the materials, and the photoelectric conversionrate of the cell is improved.

Description

technical field [0001] The invention belongs to the technical field of battery preparation, and in particular relates to a two-dimensional perovskite solar battery with high photoelectric conversion rate and a preparation method. Background technique [0002] At present, the perovskite structure material refers to any calcium titanate CaTiO 3 Materials with the same crystal structure, experiments found that when the metal halide material forms a perovskite structure, it is very effective as a collection layer in photovoltaic solar cells, and can successfully convert solar energy into electrical energy. Based on this discovery, in 2009 , Perovskite structure materials are officially used in thin film solar cells. In the next few years, perovskite structure materials have made great progress in the field of photovoltaics, and the photoelectric conversion rate has continued to increase, especially metal halides. Perovskite-like materials, whose raw materials are generally chea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/10H10K71/12H10K71/40H10K85/30H10K30/10Y02E10/549
Inventor 刁心峰
Owner GUIZHOU EDUCATION UNIV
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