A kind of thinning method of lithium niobate wafer

A lithium niobate and wafer technology is applied in the thinning field of lithium niobate wafers, which can solve the problems of easy occurrence of brittle failure, low processing thickness of lithium niobate hardness, deep subsurface damage layer, etc., so as to improve reliability. , reduce the risk of splintering, improve the quality of the effect

Active Publication Date: 2022-04-15
NINGBO CHIPEX SEMICON
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Problems solved by technology

[0005] The object of the present invention is to provide a method for thinning lithium niobate wafers, which is used to solve the grinding problem caused by lithium niobate low hardness, high brittleness, thin incoming material and processing thickness, and strong anisotropy. And the technical problems of brittle failure, deep subsurface damage layer and large cracking on the front and back of cutting are prone to occur during the cutting process

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  • A kind of thinning method of lithium niobate wafer
  • A kind of thinning method of lithium niobate wafer
  • A kind of thinning method of lithium niobate wafer

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Embodiment

[0036] DBG (Dicing Before Grinding, cutting before grinding) is a commonly used process for thinning and cutting the back of the wafer. The cutting process before grinding is to reverse the original process of cutting after grinding (Dicing After Grinding, cutting after grinding). That is, the technology of half-cutting the wafer first, and then dividing the wafer into chips by back grinding. By using this technology, it is possible to minimize backside cracking and wafer breakage that occur during chip dicing, enabling smooth dicing of chips from large-sized wafers. Since the chipping on the back side of the wafer is greatly reduced, it is possible to perform ultra-thin processing on the wafer while maintaining a high flexural strength, thereby enabling the production of high-strength chips. In addition, since the chip is separated by the grinding process of the grinder, the risk of damage to the thin wafer during transportation can be effectively avoided. The pre-grinding d...

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Abstract

The invention discloses a method for thinning a lithium niobate wafer, which belongs to the technical field of chip packaging. The thinning method of the lithium niobate wafer of the present invention comprises the following steps: providing a lithium niobate wafer, pasting the first dicing adhesive film on the back side of the lithium niobate wafer, and The dicing road is pre-cut to a predetermined depth; the first dicing film is removed, and a grinding film is attached to the front of the lithium niobate wafer, and the grinding film is a double-layer film; the back of the lithium niobate wafer is Grinding until the grains are separated; sticking a second dicing film on the back of the lithium niobate wafer, and then removing the grinding film. The invention realizes the cutting process of the lithium niobate wafer before grinding, and avoids the brittle failure, deep subsurface damage layer, and large cracking of the front and back sides of the cutting lithium niobate wafer in the prior art during grinding and cutting. Phenomenon, and the cracking of the front and back of the chip can be controlled within 10um, which is conducive to ensuring the quality of lithium niobate chip packaging products.

Description

technical field [0001] The invention relates to the technical field of chip packaging, in particular to a method for thinning a lithium niobate wafer. Background technique [0002] With the increasing demand for miniaturization, light weight and multi-functionalization of electronic components, integrated circuits have higher and higher requirements for ultra-thin chips. Micro-electromechanical systems, image sensors, stacked chips, and multi-chip packages will all be used Ultra-thin chips with a thickness of less than 50 μm. With the continuous development of integrated circuit chips in the direction of high density and thinness, in order to meet the above requirements of the chip, it is necessary to thin and cut the back of the wafer during chip packaging. [0003] Lithium niobate (LiNbO 3 ) crystals are widely used in optical storage, optical waveguide, and optical communication technologies due to their excellent piezoelectric, electro-optic, and nonlinear optical prop...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/683H01L21/78B24B27/06B24B37/04B24B37/10B24B55/00
CPCH01L21/02013H01L21/02016H01L21/78H01L21/6836B24B27/0675B24B37/042B24B37/10B24B55/00H01L2221/68327H01L2221/68386
Inventor 何肇阳赵亚东罗立辉钟志明汪洋陈楚杰
Owner NINGBO CHIPEX SEMICON
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