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Cmp compositions for sti applications

A polishing composition, chemical mechanical technology, applied in the direction of polishing composition containing abrasives, other chemical processes, chemical instruments and methods, etc., can solve problems such as SiN loss, erosion, and influence on device manufacturing

Active Publication Date: 2020-10-30
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Recessing is undesirable because recessing of substrate features can adversely affect device fabrication by causing transistors and transistor components to fail to isolate from each other, thereby causing short circuits
In addition, over-polishing of the substrate can also lead to other undesirable effects such as, for example, erosion, SiN loss, oxide loss, and exposing the underlying oxide to damage from polishing or chemical activity, which detrimentally Affect the quality and performance of the device
[0004] Furthermore, many existing polishing compositions (particularly those containing ceria abrasives) exhibit limited concentrating capabilities due to the instability of the polishing composition beyond a certain concentration , resulting in the settling of abrasive components
Therefore, the instability of the concentrated polishing composition requires the production of more diluted polishing composition, which increases the volume of material that must be transported and stored

Method used

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  • Cmp compositions for sti applications
  • Cmp compositions for sti applications
  • Cmp compositions for sti applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0063] (1) The chemical mechanical polishing composition shown in embodiment (1), comprising: (a) ceria (ceria) abrasive particles; (b) cationic polymer; (c) nonionic polymer comprising polyethylene Glycol Stearyl Ether, Polyethylene Glycol Lauryl Ether, Polyethylene Glycol Oleyl Ether, Poly(ethylene)-co-poly(ethylene glycol), Octylphenoxypoly(ethyleneoxy) Ethanol, or a combination thereof; (d) a saturated monobasic acid; and (e) an aqueous carrier.

[0064] (2) Embodiment (2) shows the polishing composition of embodiment (1), wherein the ceria abrasive particles include calcined ceria particles, wet ceria particles, wet-based Wet-based processed ceria particles, or combinations thereof.

[0065] (3) Embodiment (3) shows the polishing composition of embodiment (1) or (2), wherein the cerium oxide abrasive particles are present in the polishing composition at a concentration of about 0.0005% by weight to about 10% by weight.

[0066] (4) The polishing composition of any one o...

Embodiment 1

[0105] This example demonstrates the effectiveness of a chemical mechanical polishing composition comprising: ceria abrasive particles, a cationic polymer, a nonionic polymer comprising polyethylene glycol stearyl ether, saturated Monobasic acid, and aqueous carrier. This example also demonstrates a method for chemical mechanical polishing of a substrate according to an embodiment of the present invention.

[0106] Individual substrates each comprising a dielectric layer on the substrate surface and a silicon nitride (SiN) layer (0.18×0.18 μm pattern size) on the substrate surface were polished with five different polishing compositions 1A to 1E ( Cell D feature), so as to evaluate the polishing performance of the blanket (blanket) and the polishing performance of the pattern. Use IC1010 TM Pad or NEXPLANAR TM E6088 pad, on REFLEXION with 300mm platform TM Polish the substrate on the polishing tool.

[0107]Polishing Composition 1A (comparative) contained 0.29% by weight ...

Embodiment 2

[0116] This example demonstrates the effectiveness of a chemical mechanical polishing composition comprising: cerium oxide abrasive particles, a cationic polymer, a nonionic polymer comprising polyethylene glycol stearyl ether, a saturated monobasic acid, and aqueous carriers. This example also demonstrates a method for chemical mechanical polishing of a substrate according to an embodiment of the present invention.

[0117] The blanket was evaluated by polishing separate substrates, each comprising a dielectric layer on the substrate surface and a silicon nitride (SiN) layer on the substrate surface (Cell D feature), with two different polishing compositions 2A and 2B. Overlay polishing performance and pattern polishing performance. Each substrate was overpolished to approximately The endpoint (endpoint).

[0118] Polishing Composition 2A (comparative) contained 0.20% by weight of cerium oxide abrasive particles and 0.0065% by weight of 3,5-dihydroxybenzoic acid as a conv...

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Abstract

The invention relates to a chemical-mechanical polishing composition comprising (a) ceria abrasive particles, (b) a cationic polymer, (c) a nonionic polymer comprising polyethylene glycol octadecyl ether, polyethylene glycol lauryl ether, polyethylene glycol oleyl ether, poly(ethylene)-co-poly(ethylene glycol), octylphenoxy poly(ethyleneoxy)ethanol, or a combination thereof, (d) a saturated monoacid, and (e) an aqueous carrier. The invention also relates to a method of polishing a substrate.

Description

Background technique [0001] Compositions and methods for planarizing or polishing substrate surfaces are well known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in a liquid carrier (eg, an aqueous carrier) and are applied to a surface by contacting a substrate with a polishing pad saturated with the polishing composition. Typical abrasive materials include silicon dioxide, cerium oxide, aluminum oxide, zirconium oxide, and tin oxide. Polishing compositions are typically used in conjunction with polishing pads (eg, polishing cloths or discs). The abrasive material may be incorporated into the polishing pad instead of, or in addition to, being suspended in the polishing composition. [0002] As a method for isolating elements of semiconductor devices, much attention has been paid to the Shallow Trench Isolation (STI) process in which a silicon nitride (SiN) layer is formed on a silicon substrate to form shallow tren...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04C09K3/14
CPCB24B37/044C09G1/02H01L21/31053C09G1/04C09K3/1409C09K3/1463H01L21/76224H01L21/31055H01L21/30625
Inventor S.布罗斯南
Owner CMC MATERIALS INC
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