Nickel oxide composite film, preparation method thereof and LED

A technology of composite thin film and nickel oxide, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, coatings, etc., can solve the problems of unsatisfactory hole transport effect and low work function, so as to facilitate hole transport and improve Work function, avoid complex and time-consuming preparation process

Active Publication Date: 2020-10-30
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL +1
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  • Abstract
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Problems solved by technology

[0004] One object of the present invention is to provide a nickel oxide composite thin film and its preparation method, aiming to solve the technical problem that the existing nickel oxide thin film has a low work function, which leads to unsatisfactory hole transport effect

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  • Nickel oxide composite film, preparation method thereof and LED
  • Nickel oxide composite film, preparation method thereof and LED
  • Nickel oxide composite film, preparation method thereof and LED

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preparation example Construction

[0030] On the one hand, the embodiment of the present invention provides a kind of preparation method of nickel oxide composite film, and this preparation method comprises the following steps:

[0031] S01: Provide initial nickel oxide film;

[0032] S02: depositing alkyl sulfate on the surface of the initial nickel oxide film, and then performing oxygen plasma treatment to obtain the nickel oxide composite film.

[0033] The preparation method of the nickel oxide composite film provided by the embodiment of the present invention firstly deposits an alkyl sulfate on the surface of the initial nickel oxide film, and then performs oxygen plasma treatment to obtain a modified nickel oxide composite film. The preparation method has simple process and good repeatability, and avoids the complex and time-consuming problem of the traditional metal cation doping preparation process, and the preparation method can significantly improve the work function of the nickel oxide composite fil...

Embodiment 1

[0055] A perovskite light-emitting diode, the structure of which is as follows figure 1 As shown, it includes an anode 1 , a hole transport layer 2 , a perovskite light-emitting layer 3 , an electron transport layer 4 and a cathode 5 sequentially from bottom to top. Wherein, the material of anode 1 is ITO, the material of hole transport layer 2 is nickel oxide composite film, the material of electron transport layer 4 is TPBI, and the material of cathode 5 is LiF / Al.

[0056] The preparation steps of the above-mentioned hole transport layer 2 include:

[0057] Dissolve 1 mmol of nickel acetate tetrahydrate and 60 μL of ethanolamine in 10 ml of ethanol solution, and stir at 60 ° C for 4 hours to obtain a nickel oxide precursor solution; filter the nickel oxide precursor with a polytetrafluoroethylene filter, and place it in a 1 cm × 1 cm Spin-coat the anode ITO substrate with 50 μL of the above-mentioned nickel oxide precursor solution (prepared by solution spin-coating under ...

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Abstract

The invention belongs to the technical field of hole transport materials, and particularly relates to a nickel oxide composite film and a preparation method thereof and an LED. The preparation methodof the nickel oxide composite film comprises the following steps: providing an initial nickel oxide film; and depositing alkyl sulfate on the surface of the initial nickel oxide film, and then carrying out oxygen plasma treatment to obtain the nickel oxide composite film. According to the preparation method, the work function of the nickel oxide composite film can be remarkably improved, and the stability of the work function can be improved, so that the nickel oxide composite film has very good hole transport performance and has a very good application prospect in a light-emitting device.

Description

technical field [0001] The invention belongs to the technical field of hole transport materials, and in particular relates to a nickel oxide composite thin film, a preparation method thereof, and an LED. Background technique [0002] Among many hole transport materials, nickel oxide (NiO x ) have been extensively studied in fields such as perovskite light-emitting diodes (PeLEDs) due to their excellent chemical stability, high electron mobility, and large-scale fabrication convenience. However, the carrier transport ability of nickel oxide film is still not satisfactory at this stage. The key problem is that it has a large potential barrier with the perovskite light-emitting layer and a low hole concentration, which limits the ability of holes based on nickel oxide. Electro-optic conversion efficiency of PeLEDs in the transport layer. [0003] At present, scientists generally use the method of doping metal nanoparticles to improve the charge transport performance of nickel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54B05D3/14B05D1/00
CPCB05D1/00B05D3/148H10K50/15H10K2102/00
Inventor 赵维巍王浩然
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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