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A kind of silicon solar cell and its manufacturing method

A technology of silicon solar cells and manufacturing methods, applied in the field of solar cells, to achieve the effect of solving the phenomenon of potential-induced attenuation and solving local charge accumulation

Active Publication Date: 2021-12-17
无锡优顺能源开发科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the photovoltaic modules produced by the solar cell manufacturing process in the prior art are prone to potential-induced attenuation effects, that is, the photovoltaic modules are under the action of high negative voltage for a long time, so that there is a leakage current channel between the glass substrate and the packaging material. A large amount of charge accumulates on the surface of the solar cell

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A method for making a silicon solar cell, comprising the steps of:

[0022] Step 1, the silicon substrate is textured, diffused and etched, and then plasma cleaning is performed to achieve a clean surface; the texture is acid textured, the diffusion is phosphorus diffusion, and the plasma cleaning uses nitrogen, plasma The cleaning time is 30s;

[0023] Step 2, apply the ethyl silicate ethanol solution evenly on the surface of the silicon substrate, dry at a constant temperature in a humid environment for 2 hours, and then heat up and dry for 30 minutes to form an anti-reflection film; the ethyl silicate in the ethyl silicate ethanol solution The concentration of the ester is 0.02mol / L, and the ethyl silicate solution is evenly sprayed on the surface of the silicon substrate to form a good liquid film structure, and the spraying amount is 2mL / cm 2 , the humidity of the humid environment is 30%, the temperature of constant temperature drying is 80°C, the temperature of ...

Embodiment 2

[0027] A method for making a silicon solar cell, comprising the steps of:

[0028] Step 1, the silicon substrate is textured, diffused and etched, and then plasma cleaning is performed to achieve a clean surface; the texture is acid textured, the diffusion is phosphorus diffusion, and the plasma cleaning uses nitrogen, plasma The cleaning time is 900s;

[0029] Step 2, apply the ethyl silicate ethanol solution evenly on the surface of the silicon substrate, dry at a constant temperature in a humid environment for 4 hours, and then heat up and dry for 120 minutes to form an anti-reflection film; the ethyl silicate in the ethyl silicate ethanol solution The concentration of the ester is 0.02mol / L, and the ethyl silicate solution is evenly sprayed on the surface of the silicon substrate to form a good liquid film structure, and the spraying amount is 5mL / cm 2 , the humidity of the humid environment is 30%, the temperature of constant temperature drying is 90 ° C, the temperature...

Embodiment 3

[0033]A method for making a silicon solar cell, comprising the steps of:

[0034] Step 1, the silicon substrate is textured, diffused and etched, and then plasma cleaning is performed to achieve a clean surface; the texture is acid textured, the diffusion is phosphorus diffusion, and the plasma cleaning uses nitrogen, plasma The cleaning time is 500s;

[0035] Step 2, apply the ethyl silicate ethanol solution evenly on the surface of the silicon substrate, dry at a constant temperature in a humid environment for 3 hours, and then heat up and dry for 90 minutes to form an anti-reflection film; the ethyl silicate in the ethyl silicate ethanol solution The concentration of the ester is 0.02mol / L, and the ethyl silicate solution is evenly sprayed on the surface of the silicon substrate to form a good liquid film structure, and the spraying amount is 4mL / cm 2 , the humidity of the humid environment is 30%, the temperature of constant temperature drying is 85°C, the temperature of ...

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Abstract

The invention belongs to the field of solar cells, and relates to a silicon solar cell, in particular to a method for manufacturing a silicon solar cell, comprising the following steps: step 1, performing texturing, diffusion and etching on a silicon substrate, and then performing plasma Cleaning treatment to achieve a clean surface; step 2, evenly apply ethyl silicate ethanol solution on the surface of the silicon substrate, dry at a constant temperature in a humid environment for 2-4h, and then heat up and dry for 30-120min to form an anti-reflection film; Step 3: Pre-print on the silicon substrate, dry under nitrogen environment to form a pre-printed film, then print electrodes, and sinter the silicon wafers with printed electrodes to make solar cells. The invention solves the potential-induced attenuation phenomenon of existing solar panels, utilizes the electrical insulation properties of silicon dioxide and the electrical conductivity of titanium monoxide, and realizes no leakage current phenomenon on the surface of the silicon substrate, supplemented by the combination of titanium monoxide and slurry Connectivity, forming a fast conduction system.

Description

technical field [0001] The invention belongs to the field of solar cells, and relates to a silicon solar cell, in particular to a method for manufacturing a silicon solar cell. Background technique [0002] At present, solar energy is a kind of clean energy, and the photovoltaic module uses the photovoltaic effect of the P-N junction of silicon material to convert light energy into electrical energy, including: a glass backplane and a glass substrate set opposite to each other; The solar cells between them; the encapsulation frames for fixing the glass backplane, solar cells and glass substrates, etc. [0003] The traditional solar cell production process includes: texturing, diffusion, etching, chemical vapor deposition (PECVD), screen printing and sintering and other processes. Among them, texturing refers to the use of acid or alkali to corrode different surface topography on the surface of the silicon wafer, that is, surface texture, thereby reducing the reflectivity of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/02H01L31/0216
CPCH01L31/1804H01L31/02167H01L31/02008H01L31/02168Y02E10/547Y02P70/50
Inventor 傅坚候李明张建波
Owner 无锡优顺能源开发科技有限公司
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