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Homojunction magnetoresistive device of magnetic two-dimensional semiconductor and preparation method and application thereof

A technology of two-dimensional semiconductors and magnetoresistive devices, which is applied in the fields of magnetic field controlled resistors, components of electromagnetic equipment, and manufacturing/processing of electromagnetic devices, and can solve problems such as limited applications

Active Publication Date: 2020-07-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, their non-magnetic properties limit their application in the field of magnetic materials.

Method used

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  • Homojunction magnetoresistive device of magnetic two-dimensional semiconductor and preparation method and application thereof
  • Homojunction magnetoresistive device of magnetic two-dimensional semiconductor and preparation method and application thereof
  • Homojunction magnetoresistive device of magnetic two-dimensional semiconductor and preparation method and application thereof

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preparation example Construction

[0046] The present invention also discloses a method for preparing the homojunction magnetoresistive device as described above, including:

[0047] Preparing a silicon dioxide layer on a silicon wafer;

[0048] preparing a first nanosheet on the silicon dioxide layer;

[0049] transferring a second nanosheet on the first nanosheet, placing a portion of the second nanosheet on the first nanosheet to form a partial overlap;

[0050] The source and the drain are respectively prepared on the first nanosheet and the second nanosheet, and the source and the drain are respectively located on the first nanosheet and the second nanosheet without intersecting, that is, the homojunction magnetoresistive device is obtained .

[0051] In some embodiments of the present invention, both the first nanosheet and the second nanosheet are Fe x sn 1-x S 2 Nanosheets;

[0052] In some embodiments of the present invention, the Fe x sn1-x S 2 The preparation method of nanosheet comprises: Sn...

Embodiment 1

[0080] like figure 1 Shown, Si / SiO 2 On the substrate, two layers of Fe 0.021 sn 0.979 S 2 The thin slices are provided with metal electrodes on the two edges of the two thin slices. figure 1 A cross-sectional schematic diagram of the device.

[0081] The lower layer Fe shown in this example 0.021 sn 0.979 S 2 The layer thickness is about 12nm;

[0082] The upper layer Fe shown in this example 0.021 sn 0.979 S 2 The layer thickness is about 25 nm.

[0083] The annealing temperature and time used in this embodiment are annealing at 150° C. for 60 minutes.

[0084] Both the source electrode and the drain electrode are thermally evaporated Au electrodes with a thickness of about 46nm. When testing, use a bonding machine to draw electrodes from the source and drain electrodes and connect them to external circuits.

[0085] The measurement method is to use low-temperature strong magnetic field quantum transport equipment for measurement, which can provide a stable tes...

Embodiment 2

[0091] Compared with Example 1, the preparation process of the device is the same, the difference is that nanosheets with different thicknesses are used to prepare homojunction devices.

[0092] The lower layer Fe shown in this example 0.021 sn 0.979 S 2 The layer thickness is 12.3nm, about 15 layers;

[0093] The upper layer Fe shown in this example 0.021 sn 0.979 S 2 The layer thickness is 11.5 nm, about 14 layers.

[0094] The annealing temperature and time used in this embodiment are annealing at 200° C. for 60 minutes.

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Abstract

The invention discloses a homojunction magnetoresistive device of a magnetic two-dimensional semiconductor and a preparation method and application of the homojunction magnetoresistive devicethereof.The homojunction magnetoresistive device comprises a silicon layer;, the a silicon dioxide layer which is arranged on the silicon layer, and wherein the silicon dioxide layer and the silicon layer jointly serve as a grid and an insulating layer; the a first nanometer sheet and the a second nanometer sheet which are both arranged on the silicon dioxide layer, wherein the first nanometer sheet and the second nanometer sheet are partially overlapped, a vertical structure is formed in the overlapped area, and the first nanometer sheet and the second nanometer sheet are both made of transition metal magnetic atom doped non-magnetic two-dimensional semiconductor materials; and a source electrode and a drain electrode which are respectively arranged on the first nanometer sheet and the second nanometer sheet. The doping of the elements is an effective means for regulating and controlling the properties of the two-dimensional material, and magnetism is introduced into the non-magnetic materialby utilizing the doping of transition metal atoms to the non-magnetic material , so that more options are provided for the development of spintronics.

Description

technical field [0001] The invention relates to the field of magnetic two-dimensional semiconductors, in particular to a homojunction magnetoresistance device of magnetic two-dimensional semiconductors, a preparation method and application thereof. Background technique [0002] Since graphene was successfully prepared, the development of two-dimensional materials has attracted a lot of attention. Many materials with unique and excellent properties have been discovered and widely studied. For example, transition metal dichalcogenides (TMDCs) have great application potential in the field of optoelectronics because of their excellent optoelectronic properties. In the research on two-dimensional materials, the development of two-dimensional magnetic materials has also attracted the attention of some researchers. [0003] Introducing impurity atoms into materials to change the physical properties of 2D materials is a very effective way to achieve more functionalization of 2D ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/02H01L43/12B82Y30/00H10N50/10H10N50/01H10N50/80
CPCB82Y30/00H10N50/80H10N50/10H10N50/01H10N50/85
Inventor 魏钟鸣房景治黎博廖志敏杨珏晗魏大海宗易昕文宏玉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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