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GaN-based near-ultraviolet laser with composite waveguide layer

A gallium nitride-based, composite waveguide technology, which is applied in the field of gallium nitride-based near-ultraviolet lasers, can solve problems such as increased laser structural defect density and affecting device performance, and achieve increased optical limit factors, low defect density, and crystal quality. Good results

Active Publication Date: 2021-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the increase of the Al composition in the AlGaN quantum barrier layer and in the waveguide layer / confinement layer increases the defect density in the laser structure and affects the device performance

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  • GaN-based near-ultraviolet laser with composite waveguide layer

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Embodiment Construction

[0024] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0025] The invention discloses a gallium nitride-based near-ultraviolet laser with a composite waveguide layer, comprising:

[0026] a substrate;

[0027] An n-type epitaxial layer fabricated on the substrate;

[0028] An n-type confinement layer made on the n-type epitaxial layer;

[0029] A first n-type AlInN waveguide layer fabricated on the n-type confinement layer;

[0030] A second n-type AlInN waveguide layer fabricated on the first n-type AlInN waveguide layer;

[0031] an active region fabricated on the second n-type AlInN waveguide layer;

[0032] an AlInN waveguide layer fabricated on the active region;

[0033] A p-type electron blocking layer fabricated on the AlInN waveguide layer;

[0034] A p-type Al...

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Abstract

A gallium nitride-based near-ultraviolet laser with a composite waveguide layer includes a substrate; an n-type epitaxial layer; an n-type confinement layer; a first n-type AlInN waveguide layer; a second n-type AlInN waveguide layer; Active region; an AlInN waveguide layer; a p-type electron blocking layer; a p-type AlInN waveguide layer; a p-type confinement layer, which is made on the p-type AlGaN waveguide layer, and the middle of the p-type confinement layer is a protrusion a ridge shape; a p-type doped / p-type heavily doped contact layer; a p-type ohmic electrode and an n-type ohmic electrode. The invention adopts AlInN material instead of AlGaN material as the waveguide layer of gallium nitride-based near-ultraviolet laser. Under the same growth temperature, the crystal quality of AlInN is better, the defect density is lower, and the optical absorption caused by defects and impurities is reduced. AlInN is easier to obtain a larger refractive index difference by changing the composition, better confine the optical field near the active region, and increase the optical confinement factor of the laser.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a gallium nitride-based near-ultraviolet laser with a composite waveguide layer. Background technique [0002] The theoretical lasing wavelength of GaN-based semiconductor lasers covers a wide range from infrared to ultraviolet, and has a wide range of applications in solid-state lighting, automotive headlights, laser projection and display, biological disinfection and sterilization. The wavelengths of commercially available GaN-based lasers include blue light, violet light, green light and some near-ultraviolet light, and deep-ultraviolet lasers with a wavelength as short as 271.8nm have also achieved electrical injection lasing. [0003] Compared with the visible light band, the problems faced in the development of GaN-based lasers in the near ultraviolet band are mainly the decrease of luminous recombination rate and the increase of optical absorption loss. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/20H01S5/343
CPCH01S5/20H01S5/343H01S5/34346
Inventor 陈平赵德刚朱建军刘宗顺杨静梁锋
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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