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Post-processing method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in the direction of organic semiconductor devices, semiconductor devices, electrical components, etc., can solve the problems of quantum dot light-emitting diode device efficiency is not obvious, the post-processing method takes a long time, etc., to improve the luminous efficiency of the device, The effect of shortening the production cycle and improving the external quantum efficiency

Active Publication Date: 2021-06-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a post-processing method for quantum dot light-emitting diodes, which aims to solve the problem that the existing post-processing method of quantum dot light-emitting diodes takes too long and has no obvious effect on improving the efficiency of quantum dot light-emitting diodes.

Method used

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Embodiment approach

[0027] As another specific implementation method, the quantum dot light emitting diode is placed in an environment provided with a light source, the cathode and anode of the quantum dot light emitting diode are energized, and the method of performing light treatment on the quantum dot light emitting diode The method is: energize the cathode and anode of the quantum dot light emitting diode, and perform light treatment on the quantum dot light emitting diode in a closed cavity, and the material of the inner wall of the closed cavity is a material with light reflection performance. Through the reflection of the reflective material on the inner wall surface of the airtight cavity, the light emitted by the light source can be irradiated on the surface of the quantum dot light emitting diode as much as possible, so as to improve the irradiation rate of the quantum dot light emitting diode, thereby improving the appearance of the quantum dot light emitting diode. Quantum efficiency, ...

Embodiment 1

[0034] A post-processing method for quantum dot light-emitting diodes, comprising the following steps:

[0035] Provide 5 quantum dot light-emitting diodes (respectively numbered 1, 2, 3, 4, 5) with the same structure and specifications. A functional stacked structure between the anode and the cathode, the functional stacked structure includes a hole injection layer (PEDOT:PSS) and a hole transport layer (TFB) stacked in sequence from the anode to the cathode , a quantum dot light-emitting layer (CdSe / ZnS QDs), an electron transport layer (ZnO), and an electron injection layer (LiF), wherein the anode is arranged on a glass substrate.

[0036] The five quantum dot light emitting diodes are connected to an external power supply, and the cathodes and anodes of the quantum dot light emitting diodes are energized. The quantum dot light-emitting diodes numbered 1-4 are subjected to light treatment, and the light source used in the light treatment is selected from blue light with a...

Embodiment 2

[0042] A post-processing method for quantum dot light-emitting diodes, comprising the following steps:

[0043] Provide 5 quantum dot light-emitting diodes (respectively numbered 6, 7, 8, 9, 10) with the same structure and specifications. A functional stacked structure between the anode and the cathode, the functional stacked structure includes a hole injection layer (PEDOT:PSS) and a hole transport layer (TFB) stacked in sequence from the anode to the cathode , a quantum dot light-emitting layer (CdSe / ZnS QDs), an electron transport layer (ZnO), and an electron injection layer (LiF), wherein the anode is arranged on a glass substrate.

[0044] The cathode and anode of the quantum dot light-emitting diode are energized. Perform light treatment on the quantum dot light-emitting diodes numbered 6-9, and the light source used in the light treatment is selected from blue light with an emission wavelength of 400nm, and the illuminance of the light source used in the light treatmen...

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Abstract

The invention provides a post-processing method of a quantum dot light-emitting diode, comprising the following steps: providing a quantum dot light-emitting diode, the quantum dot light-emitting diode includes a cathode and an anode oppositely arranged, and an anode arranged between the cathode and the anode The quantum dot light-emitting layer between; the cathode and the anode of the quantum dot light-emitting diode are energized, and the quantum dot light-emitting diode is subjected to light treatment.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a post-processing method of quantum dot light-emitting diodes. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have three-dimensional dimensions in the nanometer range (1-100nm), and are a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good photostability, narrow half-peak width, wide excitation spectrum and controllable emission spectrum, and are very suitable as light-emitting materials for light-emitting devices. In recent years, quantum dot fluorescent materials are widely used in the field of flat-panel displays due to their advantages of high light color purity, adjustable luminous color, and long service life, and have become a promising next-generation display and solid-state lighting source. Quantum Dot ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H10K99/00
CPCH10K71/00H10K50/115H10K71/40H10K50/81H10K50/828H10K2102/351
Inventor 张节向超宇
Owner TCL CORPORATION
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