Semiconductor device and preparation method thereof

Abstract

The embodiment of the invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises: a substrate, multiple semiconductor layers which are positioned on one side of the substrate and comprise a buffer layer, a channel layer and a barrier layer which are sequentially positioned on one side of the substrate; a source electrode, a grid electrode and adrain electrode which are located on the side, away from the substrate, of the multiple semiconductor layers, wherein the grid electrode is located between the source electrode and the drain electrode; and P-type material layer located in the multiple semiconductor layers and located on the side, away from the grid electrode, of the drain electrode, the lower surface of the P-type material layer extends to the surface of the side, close to the channel layer, of the buffer layer or extends into the buffer layer, and the P-type material layer is electrically connected with the drain electrode. AP-type material layer is arranged to be electrically connected with a drain electrode; under forward bias, the P-type material layer injects holes into the buffer layer to neutralize electrons boundby traps caused by lattice defects or doping in the buffer layer, so that the speed of separating the electrons from the buffer layer is increased, the saturation current of the semiconductor device is improved, the dynamic on-resistance of the semiconductor device is reduced, and the performance of the semiconductor device is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In recent years, GaN-based high electron mobility transistors (HEMTs) have developed rapidly, and the wurtzite structure AlGaN / GaN HEMTs have the best development prospects. HEMTs may also be referred to as Modulation Doped Field Effect Transistors (MODFETs) or Heterojunction Field Effect Transistors (HFETs). Its on-resistance and parasitic capacitance are small, the switching speed is fast, and the thermal stability is good. It is a high-temperature, high-frequency and high-power device that is currently booming. [0003] At present, GaN-based HEMT devices have entered the practical stage and play a key role, but there are still many reliability problems, which seriously restrict the popularization and further development of devices. Among them, because the...

AI Technical Summary

Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a semiconductor device and its preparation method to solve the technical problems in the prior art that the semiconductor device has a large dynamic on-resistance and a small saturation current due to electrons trapped by defects in the buffer layer.

Images