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Based on amorphous (galu) 2 o 3 Thin-film solar-blind ultraviolet light detector

A detector and ultraviolet light technology, which is applied in the direction of semiconductor devices, sustainable manufacturing/processing, climate sustainability, etc., can solve the problems of reducing the electrical performance and stability of devices, and the degradation of crystal quality, so as to improve the detection ability and reduce the Effect of dark current and faster response speed

Active Publication Date: 2021-03-23
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, to achieve solar-blind ultraviolet detection, the band gap of the active layer semiconductor material must be greater than 4.4eV, while MgZnO and AlGaN increase the band gap to 4.4eV by increasing the Mg and Al content respectively, which will make the crystal quality decrease significantly. , will greatly reduce the electrical performance and stability of the device

Method used

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  • Based on amorphous (galu) <sub>2</sub> o <sub>3</sub> Thin-film solar-blind ultraviolet light detector
  • Based on amorphous (galu) <sub>2</sub> o <sub>3</sub> Thin-film solar-blind ultraviolet light detector
  • Based on amorphous (galu) <sub>2</sub> o <sub>3</sub> Thin-film solar-blind ultraviolet light detector

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Such as figure 1 As shown, the present embodiment is based on an amorphous (GaLu) 2 o 3 Thin-film sun-blind ultraviolet light detector, the detector includes an m-plane sapphire substrate, an active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is amorphous (GaLu) 2 o 3 film, the material of the parallel metal electrodes is Au. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 120 nm, the thickness of the parallel metal electrodes is 50 nm, and the distance between the parallel metal electrodes is 10 μm.

[0050] In this embodiment, the above-mentioned amorphous (GaLu) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0051] Step 1: Preparation by solid phase sintering (GaLu) 2 o 3 Ternary ceramic target

[0052] 1.1 molar ratio Ga 2 o 3 : Lu 2 o 3 =95:5, weigh 8.995g Ga 2 o 3 powder and 1.005g Lu ...

Embodiment 2

[0060] Embodiment 2 (comparative example)

[0061] A single crystal (GaLu) based 2 o 3 Thin-film sun-blind ultraviolet photodetector, the detector includes c-plane sapphire substrate, active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is (GaLu) 2 o 3 thin film, the material of the parallel metal electrodes is Au, the thickness of the substrate is 0.43 mm, the thickness of the active layer is 150 nm, the thickness of the parallel metal electrodes is 55 nm, and the distance between the parallel metal electrodes is 10 μm .

[0062] In this embodiment, the above-mentioned single crystal (GaLu) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0063] Step 1: (GaLu) prepared by the same solid phase sintering method as in Example 1 2 o 3 Ternary ceramic target

[0064] Step 2 utilizes (GaLu) 2 o 3 Preparation of solar-blind ultraviolet light d...

Embodiment 3

[0069] Embodiment 3 (comparative example)

[0070] A β-Ga based 2 o 3 Thin-film sun-blind ultraviolet light detector, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal electrodes from bottom to top, wherein: the active layer is β-Ga 2 o 3 thin film, the material of the parallel metal electrodes is Au, the thickness of the substrate is 0.43 mm, the thickness of the active layer is 150 nm, the thickness of the parallel metal electrodes is 55 nm, and the distance between the parallel metal electrodes is 10 μm.

[0071] The above-mentioned β-Ga-based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0072] Step 1: Preparation of Ga by sintering by solid phase sintering method 2 o 3 Ceramic target

[0073] 1.1 Weigh 10g Ga 2 o 3 Powder, add 15g of deionized water, then place in the ball mill jar (the ball milling medium is zirconia ceramic balls) i...

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Abstract

The invention discloses a solar blind ultraviolet light detector based on an amorphous (GaLu)2O3 film and a preparation method of the solar blind ultraviolet light detector. The detector sequentiallycomprises an m-surface sapphire substrate, an active layer and a pair of parallel metal electrodes from bottom to top, and the active layer is an amorphous (GaLu)2O3 film. According to the invention,Lu2O3 and Ga2O3 are utilized to form the (GaLu)2O3 alloy, so that the optical band gap of Ga2O3 is increased, the (GaLu)2O3 film with a higher band gap can effectively reduce the dark current of the device, and the cut-off wavelength is blue-shifted to be within 280nm. In addition, an amorphous (GaLu)2O3 film grows on the m-plane sapphire, and a plurality of dangling bonds and surface states existin the film and can be used as a composite center to accelerate the response speed of the device. Benefited from this, compared with a pure Ga2O3 device, the amorphous (GaLu)2O3 thin film device hasthe advantage that the deep ultraviolet light detection capability of the amorphous (GaLu)2O3 thin film device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detectors, in particular to a sun-blind ultraviolet light detector with an MSM structure, and more specifically, the invention relates to an amorphous (GaLu) based 2 o 3 Thin-film high-gain solar-blind ultraviolet light detector and its preparation method. Background technique [0002] Since the deep ultraviolet part (200-280nm) in sunlight will be strongly absorbed by the ozone layer before reaching the earth's surface, the solar-blind ultraviolet photodetector has the characteristics of strong anti-interference ability and high sensitivity when working on the earth's surface. It has very important applications in military and people's livelihood fields such as missile early warning, ultraviolet communication, fire prevention and control, and environmental monitoring. Compared with the traditional vacuum ultraviolet photomultiplier tube with high power consumption and high price, solar-bl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/101H01L31/032
CPCH01L31/02161H01L31/032H01L31/101H01L31/18Y02P70/50
Inventor 何云斌黄攀黎明锴王其乐卢寅梅常钢瞿秋琳李派
Owner HUBEI UNIV
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