Preparation of electrically-induced resistive switching polycatenane crystalline material and application thereof in memory

Abstract

The invention provides a preparation method of an electrically-induced resistive switching polycatenane crystalline material. The preparation method comprises the following steps: S1, adding a mixed solvent of methanol and water into a glass container, then adding 1,3,6,8-pyrene tetraphosphoric acid, 1,1'-bis(4-carboxyl benzyl)-4,4'-dipyridyl dichloride and a cobalt salt into the mixed solution ofmethanol and water, and carrying out ultrasonic treatment for 5-15 minutes; S2, sealing the glass container, then placing the glass container in an oven, heating the glass container from room temperature to 60-100 DEG C, carrying out heat preservation for 24-36 hours, and cooling the glass container to room temperature; and S3, filtering the solution to obtain solid, washing the solid with distilled water, and naturally drying the solid at room temperature to obtain blocky orange crystals, namely the electrically-induced resistive switching polycatenane crystalline material. An electrically-induced resistive switching organic medium memory prepared from the material is simple in manufacturing process, high in switch ratio, low in operation voltage and stable in performance.

Description

Technical field [0001] The invention relates to the preparation and application of an electro-resistive polyxane type crystalline material, and belongs to the technical field of information storage. Background technique [0002] As the foundation of modern information technology, information storage is one of the most in-demand circuit products and has a huge market. Random resistance random access memory (RRAM) has many advantages such as high storage density, fast data writing and reading speed, re-erasable, multi-level storage, and three-dimensional accumulation. It is considered a strong candidate for the next generation of memory. Multinational companies and scientific research institutions in various countries have conducted a lot of research on RRAM. The current medium used as a resistive random access memory material can be traditional semiconductors, transition metal oxides, electrolytes, organics, and so on. However, the inorganic medium generally requires a relativel...

AI Technical Summary

Problems solved by technology

Compared with polyrotaxane, theoretical studies have shown that polycatenane, a real polymer "chain" with "interlocking" topology, also has great application potential, but so far the application research of polycatenane seems to be very deserted. The most important reason is that the synthesis of polycatenate has always been a great challenge

At present, there is no report on the synthesis of polycatenane with a definite crystal structure, and there is no report on the application of polycatenane in organic media memory.

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