Millimeter wave MMIC heat dissipation package based on 3D heterogeneous integration technology

Abstract

The invention discloses a millimeter wave MMIC heat dissipation package based on a 3D heterogeneous integration technology. The millimeter wave MMIC heat dissipation package comprises a package substrate, a transmission line arranged on the lower surface of the packaging substrate, a TSV via hole arranged in the packaging substrate, a transmission line arranged on the upper surface of the packaging substrate, gold bumps, a millimeter wave GaAs MMIC, a metal PAD arranged on the surface of the GaAs MMIC, a millimeter wave circuit pattern arranged on the surface of the GaAs MMIC, a cavity in theupper surface of the packaging substrate, a high-thermal-conductivity bonding material, a heat dissipation metal block, a plastic packaging material and a BGA solder ball. The millimeter wave MMIC heat dissipation package has the advantages of being small in size, light in weight, low in cost, good in millimeter wave electrical characteristic, excellent in heat dissipation performance and the like, and can be widely applied to a millimeter wave radio frequency front-end system.

Description

technical field [0001] The invention belongs to the technical field of millimeter-wave radio frequency front-end chip packaging, and in particular relates to a millimeter-wave MMIC heat dissipation package based on 3D heterogeneous integration technology. Background technique [0002] With the rapid development of wireless communications, automotive electronics, and other consumer electronics, people have higher and higher requirements for signal transmission rates. The narrow bandwidth below 6GHz is difficult to meet the urgent needs of future consumers for mobile communication bandwidth. The millimeter wave frequency band has become a key technology in the future Internet era due to its ability to provide greater communication bandwidth and richer spectrum resources. The most important part of the millimeter-wave communication system is the millimeter-wave front-end transceiver component, which mainly completes the functions of receiving and transmitting millimeter-wave si...

AI Technical Summary

Problems solved by technology

[0003] In the traditional low-cost plastic package, two forms of wire bonding (Wire Bonding) and bumping flip-chip (Bumping Flip-chip) are mainly used to interconnect the chip and the package substrate; Since the interconnection lead is equivalent to a large inductance connected in series with the input and output terminals of the RF front-end chip in the millimeter wave frequency band, the impedance mismatch between the input and output terminals of the millimeter wave RF front-end chip will seriously affect the electrical performance of the RF chip.

For the Bumping Flip-chip interconnection form, on the one hand, the front side of the RF chip is facing down, and the distance between the circuit on the chip surface and the direct-facing packaging substrate is small, which changes the electromagnetic field boundary conditions of the microwave circuit on the chip surface. The microwave properties of the millimeter-wave RF front-end chip will have a greater impact; on the other hand, since the back of the RF chip faces upward, plastic materials cannot form a good heat conduction path with the outside after encapsulation

Therefore, traditional plastic packages cannot meet the requirements of millimeter-wave RF front-end chips in terms of millimeter-wave microwave performance and heat conduction, which greatly limits the engineering application of millimeter-wave RF front-end chips in the future.

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