Tunneling field effect device based on overlapping coupling plate and manufacturing method

Abstract

The invention discloses a tunneling field effect device based on an overlapping coupling plate. The problems of random impurity fluctuation and bipolar off-state electric leakage of an existing deviceare mainly solved. The device comprises a substrate (1), a GaN-based buffer layer (2) and a P-type In<x> Ga<1-x> N gradient polarization layer (3) from bottom to top. An N-type In<y> Ga <1-y> N gradient polarization layer (4) is arranged on the upper right portion of the gradient polarization layer (3), and lower steps (5) are etched on the two sides of the gradient polarization layer. The leftand right sides of the lower steps are provided with a source electrode (7) and a drain electrode (6).A gate dielectric layer (8) is arranged at the upper parts of the two gradient polarization layers(3) and (4). A modulation gate (10), a gate (9), an overlapping plate (11) and an overlapping coupling plate (12) are sequentially arranged on the gate dielectric layer from left to right. The upperportions of the modulation gate (10), the gate (9), the overlapping plate (11) and the overlapping coupling plate (12) are covered with passivation layers (13). Random impurity fluctuation is avoided,and bipolar off-state electric leakage is reduced. The device can be applied to low-power-consumption electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and particularly relates to a tunneling field effect device, which can be used in a low power consumption circuit system. [0002] technical background [0003] At present, global environmental pollution and energy shortages have become one of the most important problems restricting the sustainable development of human beings. Vigorously researching and developing new low-power semiconductor devices to significantly reduce the power consumption of integrated circuit chips and electronic systems is one of the effective ways to solve this problem. Tunneling Field Effect Transistor (TFETs) is one of the new semiconductor devices with great potential. [0004] Krishnendu Ghosh et al. first proposed an InN-based tunneling field-effect transistor. This device is based on a quantum band-band tunneling mechanism, which can achieve a steeper sub-threshold slope, and has fast switching speed and s...

AI Technical Summary

Problems solved by technology

[0006] 1. Due to the inherent defects in the structure of the device, there is a strong electric field peak at the edge of the gate near the drain when the device is working under negative pressure, which leads to serious bipolar off-state leakage problems

2. The device usually uses traditional ion implantation physical doping technology to achieve device source and drain doping, which will cause random impurity fluctuations in the device

These problems will lead to device performance degradation, reduced reliability, and increased power consumption

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