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Composite film sensitive material, infrared detector and preparation method

A composite thin film and sensitive material technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low absorption efficiency and low unit photocurrent, and achieve improved photocurrent, enhanced photoresponsivity, Enhance the effect of absorption

Active Publication Date: 2021-08-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the defects of low unit photocurrent caused by low light absorption efficiency of two-dimensional materials in the near-infrared band in the prior art, the present invention provides a nano-metal-modified composite thin-film sensitive material and a preparation method thereof

Method used

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  • Composite film sensitive material, infrared detector and preparation method
  • Composite film sensitive material, infrared detector and preparation method
  • Composite film sensitive material, infrared detector and preparation method

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preparation example Construction

[0049] The present invention also provides a method for preparing the composite thin film sensitive material or the composite thin film sensitive material with a carrier, comprising the following steps: sputtering metal on the two-dimensional material; Sputtering metal on the two-dimensional material fixed on the carrier prepared by mechanical peeling and annealing process or prepared by vapor phase deposition method is sufficient.

[0050] In the preparation method of the present invention, the sputtering method is a conventional method in the art. However, it has been found by the inventors that if the metal nanoparticles are conical, the diameter of the bottom surface is 5-40 nm, the height is 3-17 nm, and the metal nano-particle layer is a metal nano-particle layer with a single-layer metal nano-particle layer. Control appropriate sputtering conditions, such as sputtering current, vacuum degree, sputtering distance, sputtering speed, sputtering time, etc. These parameters ...

Embodiment 1

[0058] size: figure 1 It is a schematic diagram of a detector, including a silicon dioxide substrate material on the surface, wherein the silicon dioxide thickness is 300nm. A few-layer molybdenum disulfide two-dimensional material obtained by mechanical exfoliation on a silicon dioxide substrate has a size of about 150 μm and a thickness of 3 to 5 layers. The ion sputtering area on the molybdenum disulfide is 50 μm×100 μm and the height is 3 to 12 nm. The gold nanoparticle belt layer, the two ends of the gold nanoparticle belt layer are used as metal electrodes by ion sputtering a 20nm thick titanium layer and an 80nm thick gold layer, and the distance between the left and right source and drain electrodes is 70nm.

[0059] Preparation of molybdenum disulfide layer: The molybdenum disulfide in this example is obtained by mechanical exfoliation method to obtain molybdenum disulfide with few layers of 2H phase, and directly transferred to the silicon dioxide substrate, and then...

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Abstract

The invention belongs to the technical field of optoelectronic materials, and particularly relates to a composite thin film sensitive material, an infrared detector and a preparation method. The technical problem to be solved by the present invention is to provide a composite thin film sensitive material and a preparation method thereof. The composite thin film sensitive material includes a two-dimensional material layer and a metal nanoparticle layer; wherein, the metal nanoparticles are conical, and the diameter of the bottom surface is 5-5 mm. 40nm, the height is 3-17nm, and the metal nanoparticle layer is a single-layer metal nanoparticle. In the present invention, the composite thin film sensitive material obtained by modifying the two-dimensional material with metal nanoparticles can improve the absorption rate of near-infrared light.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a composite film sensitive material, an infrared detector and a preparation method. In particular, it relates to a sensitive material based on nano-gold modification that enhances light absorption in the near-infrared band, a photodetector prepared by using the same, and a preparation method. Background technique [0002] Two-dimensional materials were proposed with the discovery of graphene, which refers to materials with a thickness in the nanometer range. They generally have excellent mechanical properties, good carrier mobility and other advantages, and are expected to replace traditional semiconductor materials. Semiconductor two-dimensional materials such as molybdenum disulfide, gallium selenide, and doped graphene have good photoelectric properties and have great application prospects in the field of near-infrared detection. Therefore, two-dim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/0264H01L31/18
CPCH01L31/0264H01L31/09H01L31/18Y02P70/50
Inventor 黄文李尚栋郭俊雄贺振北何宇豪龚天巡林媛俞滨
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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