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Secondary epitaxy method for preparing high-quality diamond single crystal by adopting nanostructure

A diamond single crystal and nanostructure technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high quality and performance requirements of substrate materials, reduce defects, eliminate impurities, eliminate defects, reduce The effect of defect density

Active Publication Date: 2020-03-06
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This invention does not carry out special design and treatment on the base material, but has high requirements on the quality and performance of the base material

Method used

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  • Secondary epitaxy method for preparing high-quality diamond single crystal by adopting nanostructure
  • Secondary epitaxy method for preparing high-quality diamond single crystal by adopting nanostructure
  • Secondary epitaxy method for preparing high-quality diamond single crystal by adopting nanostructure

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Effect test

Embodiment 1

[0042] The secondary epitaxial method for preparing high-quality diamond single crystals using nanostructures, the steps include:

[0043] Step 1, select the octagonal diamond seed crystal 1 prepared by the high temperature and high pressure method as the substrate, such as figure 1 shown.

[0044] Step 2, cleaning the diamond seed crystal: place the single crystal diamond seed crystal in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 20 minutes with an ultrasonic power of about 600W to remove organic impurities on the crystal surface, and finally dry it in a vacuum oven to obtain Clean seed crystals.

[0045] Step 3, pretreating the diamond substrate.

[0046] Place the cleaned seed crystal on the molybdenum tray in the MPCVD reaction chamber, and pump the vacuum of the reaction chamber to less than 10 - 6 mbar, the pressure of the reaction chamber is 200mbar, the temperature is 900°C, the microwave power is 3000W, and the flow rate of 2...

Embodiment 2

[0061] The secondary epitaxial method for preparing high-quality diamond single crystals using nanostructures, the steps include:

[0062] In step 1, an octagonal diamond seed crystal prepared by a high temperature and high pressure method is selected as a substrate.

[0063] Step 2, cleaning the diamond seed crystal: place the single crystal diamond seed crystal in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 30 minutes with an ultrasonic power of about 500W to remove organic impurities on the crystal surface, and finally dry it in a vacuum oven to obtain Clean seed crystals.

[0064] Step 3, pretreating the diamond substrate.

[0065] Place the cleaned seed crystal on the molybdenum tray in the MPCVD reaction chamber, and pump the vacuum of the reaction chamber to less than 10 - 6 mbar, the pressure of the reaction chamber is 300mbar, the temperature is 1100°C, the microwave power is 3500W, and the flow rate of 350sccm hydrogen gas is ...

Embodiment 3

[0078] The secondary epitaxial method for preparing high-quality diamond single crystals using nanostructures, the steps include:

[0079] In step 1, an octagonal diamond seed crystal prepared by a high temperature and high pressure method is selected as a substrate.

[0080] Step 2, cleaning the diamond seed crystal: place the single crystal diamond seed crystal in acetone, absolute ethanol, and water in sequence, and ultrasonically clean it for 10 minutes with an ultrasonic power of about 100W to remove organic impurities on the crystal surface, and finally dry it in a vacuum oven to obtain Clean seed crystals.

[0081] Step 3, pretreating the diamond substrate.

[0082] Place the cleaned seed crystal on the molybdenum tray in the MPCVD reaction chamber, and pump the vacuum of the reaction chamber to less than 10 - 6 mbar, the pressure of the reaction chamber is 50mbar, the temperature is 600°C, the microwave power is 2400W, and the flow rate of hydrogen gas is 40sccm, an...

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Abstract

The invention discloses a secondary epitaxy method for preparing a high-quality diamond single crystal by adopting a nanostructure. The secondary epitaxy method comprises the growth steps: 1) selecting high-temperature and high-pressure diamond as a seed crystal; 2) carrying out etching pretreatment on surface defects and damages of the seed crystal; 3) controlling the pressure, microwave power, temperature, methane concentration and growth time of a reaction chamber, and carrying out epitaxy on a diamond film layer with the thickness of 2-40 [mu]m for the first time; 4) evaporating a metal Nifilm layer with the thickness of about 4-40 nm by electron beam evaporation; 5) carrying out high-temperature heat treatment to obtain a metal nanoparticle pattern; 6) carrying out plasma etching toobtain a diamond nanoparticle pattern layer; and 7) controlling the pressure, microwave power, temperature, methane concentration and growth time of the reaction chamber, and carrying out secondary epitaxy on a diamond film with the thickness of 5-200 [mu]m. The extension of defects in the diamond film is effectively inhibited, the defect density is reduced, and the flatness of the crystal surfaceis improved.

Description

technical field [0001] The invention relates to a method for growing a diamond single crystal, in particular to a secondary epitaxy method for preparing a high-quality diamond single crystal by adopting a nanostructure. Background technique [0002] In recent years, diamond, as a new type of wide-bandgap semiconductor material, has many unique advantages, such as high hardness, high wear resistance, good thermal stability, high breakdown field strength, high thermal conductivity, and high carrier mobility. Corrosion resistance etc. Therefore, its application range has been widely expanded, and it has been vigorously developed in precision machining, aerospace, semiconductor communications, etc., and has gradually become the basic material or even the only material for solving extreme fields. Traditional synthetic diamonds generally adopt the high temperature and high pressure method, and the diamonds prepared by this method generally contain a large amount of impurities, hi...

Claims

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Application Information

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IPC IPC(8): C30B25/18C30B25/20C30B29/04
CPCC30B25/186C30B25/20C30B29/04
Inventor 智婷陶涛谢自力刘斌
Owner NANJING UNIV OF POSTS & TELECOMM
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