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A method for improving the photovoltaic performance of heterojunction solar cells

A technology for solar cells and optoelectronic performance, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as complex processes, achieve simple process steps, low process and material costs, and reduce deposition thickness.

Active Publication Date: 2021-05-11
湖州市鹑火光电有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the above processes all require the step of removing the mask in the later stage, and the process is complicated

Method used

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  • A method for improving the photovoltaic performance of heterojunction solar cells
  • A method for improving the photovoltaic performance of heterojunction solar cells
  • A method for improving the photovoltaic performance of heterojunction solar cells

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Embodiment Construction

[0034] In order to make the content of the present invention more clearly understood, the present invention will be further described in detail below based on the embodiments and in conjunction with the accompanying drawings.

[0035] Such as figure 1 As shown, the method for applying the present invention to improve the photoelectric performance of heterojunction solar cells includes:

[0036] (a) performing damage removal and surface texturing on the N-type single crystal silicon substrate layer;

[0037] (b) depositing an intrinsic amorphous silicon film on both sides of the N-type single crystal silicon substrate layer;

[0038] (c) Depositing a P-type amorphous silicon film and an N-type amorphous silicon film on the two surfaces where the intrinsic amorphous silicon film is deposited;

[0039] (d) depositing a tin-doped indium oxide transparent conductive film on the surface of the P-type amorphous silicon film;

[0040] (e) depositing a tin-doped indium oxide transpa...

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Abstract

The invention discloses a method for improving the photoelectric performance of a heterojunction solar cell. The covering layer has the functions of surface anti-reflection, carrier conduction, and electrode selective deposition mask. The steps are as follows: (a) preparing a heterojunction solar cell Battery substrate; (b) deposition of metal seed layer gate; (c) deposition of cover layer in non-gate area; (d) drying of cover layer; (e) electrochemical deposition of metal electrodes in gate area; (f) cover layer Post-processing; (g) drying the overlay. The method described in the present invention can significantly reduce the complexity of the electrochemical deposition metal electrode process, and the photoelectric performance of the polymer coating used after treatment is significantly improved, and can also be used as a transparent conductive film for heterojunction solar cells. The conventional heterojunction solar cell electrochemical deposition electrode removal mask process can also be used with less or no transparent conductive film, which is conducive to improving the conversion efficiency of heterojunction solar cells and reducing production costs, and has significant advantages in industrial production.

Description

technical field [0001] The invention belongs to the technical field of heterojunction solar cells, and relates to a method for improving the photoelectric performance of heterojunction solar cells. Background technique [0002] The principle of solar cells is based on the photovoltaic effect, a device that directly converts solar energy into electrical energy, and is also an important part of the practical application of solar energy. At present, crystalline silicon solar cells have become the mainstream of the photovoltaic industry. More than 80% of the solar cells on the market are crystalline silicon solar cells. However, the cost of producing monocrystalline silicon is still relatively high, the process is complicated, the overall conversion efficiency is not high, and the high temperature performance Poor, light-induced attenuation, etc. restrict its further development. [0003] Heterojunction solar cells deposit intrinsic amorphous silicon films on both sides of n-ty...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20H01L31/0747H01L31/0224
CPCH01L31/022466H01L31/0747H01L31/202Y02E10/50Y02P70/50
Inventor 俞健李君君何佳龙李兵川陈涛黄跃龙
Owner 湖州市鹑火光电有限公司
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