Discharge rate dependent plasticity structure and implementation method
A technology of discharge rate and implementation method, which is applied in the field of neural network and brain-like computing, can solve problems such as not providing circuit structure solutions, and achieve the effect of plasticity
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[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
[0020] Such as figure 1 As shown, the firing rate depends on plastic structures, including presynaptic neuron PRE, postsynaptic neuron POST, and SRDP electronic synapse, which includes four MOS transistors and a top electrode with TE (V TE ) bipolar switch RRAM; wherein the four MOS transistors are represented by symbols as M1, M2, M3, M4 respectively, the M1 and M2 form a group to form the M1 / M2 branch, and the M3 and M4 form a group M3 / M4 branches, the M1 / M2 is connected in parallel with M3 / M4; the presynaptic neuron PRE is connected to M1 and M3 respectively through two circuits, and the presynaptic neuron PRE is connected to M2 through a delay circuit; M1 / M2, M3...
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