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Resistive random access memory and preparation method thereof

A resistive variable memory and resistive variable technology, applied in the field of memory, can solve the problems of reducing the reliability of stored data, misreading and miswriting of stored information, etc.

Active Publication Date: 2020-01-10
JIMEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many evaluation criteria for the storage performance of resistive variable memory, the most important of which are the switch resistance ratio and stability. If the switch resistance ratio and stability of the memory are poor, it may lead to misreading and miswriting of stored information, reducing the Reliability of stored data

Method used

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  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof
  • Resistive random access memory and preparation method thereof

Examples

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Effect test

preparation example Construction

[0023] The invention provides a method for preparing a resistive variable memory, comprising the following steps:

[0024] Depositing a resistive switch material on the bottom electrode to form an amorphous resistive switch layer;

[0025] preparing a nanotube array on the amorphous resistive layer to form a shielding layer;

[0026] Perform oxygen plasma enhanced annealing treatment on the overall structure forming the shielding layer to convert the amorphous resistive layer into a highly crystalline array region;

[0027] The shielding layer is removed, and a top electrode is prepared on the surface of the highly crystalline array region to obtain a resistive variable memory.

[0028] In order to clearly illustrate the solution of the present invention, the following specific embodiments refer to figure 1 The schematic diagram of the process shown in the illustration:

[0029] In the present invention, a resistive switch material is deposited on the bottom electrode 1 to ...

Embodiment 1

[0047] according to figure 1 The flow schematic diagram shown in the preparation of resistive memory, the specific steps are as follows:

[0048] Prepare the Cr / Cu / Cr metal film system on the surface of the silicon substrate by DC sputtering method as the bottom electrode of the resistive variable memory; when depositing, control the deposition process parameters as follows: the chromium target is used as the sputtering target, and the substrate temperature does not exceed 100°C (Control at 90°C, the substrate temperature of the following steps is the same), sputtering power 100W, sputtering time 3min and copper target as sputtering target, substrate temperature below 100°C, sputtering power 100W, sputtering time 2min; After deposition, a Cr / Cu / Cr bottom electrode is obtained, wherein the thickness of the single-layer Cr is 10nm, and the thickness of Cu is 10nm;

[0049] Continue to prepare a layer of TiO with a thickness of about 100nm by radio frequency magnetron sputtering...

Embodiment 2～3

[0059] The RRAM was prepared according to the method of Example 1, except that the thickness of each deposited material layer and the annealing process parameters were different, which are specifically listed in Table 1.

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Abstract

The invention belongs to the technical field of memories, and specifically relates to a resistive random access memory and a preparation method thereof. The preparation method provided by the invention comprises the steps of depositing a resistive random material on a bottom electrode to form an amorphous resistive random layer; preparing a nanotube array on the amorphous resistive random layer toform a shielding layer; carrying out oxygen plasma enhanced annealing treatment on the whole structure with the shielding layer, and converting the amorphous resistive random layer into a high crystallization array area; and removing the shielding layer, and preparing a top electrode on the surface of the high-crystallization array region to obtain the resistive random access memory. The result of the embodiment shows that the stability of the resistive random access memory provided by the invention is remarkably improved, the maximum change of the size of the memory window is about-1.7% after 500 times of resistive random cycles, and the maximum change of the size of the memory window is about-6.3% after 3000 times of resistive random cycles, so that the resistive random access memory shows relatively good stability.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a resistive variable memory and a preparation method thereof. Background technique [0002] Memory undoubtedly occupies a very important position in today's information age. With the continuous progress of semiconductor technology, resistance random access memory (RRAM) is getting more and more attention. RRAM has technical advantages such as simple preparation process, high density, high integration, fast programming speed, reliable and stable performance, low energy consumption and low operating voltage, and the most critical thing is that RRAM is compatible with CMOS (complementary metal oxide semiconductor) technology. Therefore, RRAM has become one of the most powerful contenders for next-generation memory. [0003] The core of resistive memory is a metal / medium / metal (MIM) structure, which relies on the resistive effect of the intermediate dielectric layer to r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/8833H10N70/041H10N70/011
Inventor 徐文彬李明逵
Owner JIMEI UNIV
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