TFT substrate and its preparation method, display device
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A substrate and substrate substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as unevenness, side etching, and fast etching of copper film layers, so as to prevent damage and prevent side Eclipse effect
Active Publication Date: 2022-05-27
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF3 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0008] At present, in the preparation process of thin-film transistor array substrates, the source and drain metals mostly use copper / molybdenum Cu / Mo film layer or copper / molybdenum titanium Cu / MoTi film layer. In this structure, due to the consideration of molybdenum Mo residue or different types of cupric acid Such problems will lead to faster etching of the copper film layer, and the line width deviation (CD bias) generally exceeds 1.5um, which cannot meet the etching of the copper film layer with a thinner line width; at the same time, it is also prone to copper / molybdenum Cu / Mo side etching; The unevenness of the formed sidewall (sidewall) leads to problems such as passivation layer or gate insulation layer piercing
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0040] In addition, the present invention provides a method for preparing a TFT substrate, comprising the steps of: depositing a metal material on a base substrate; patterning the metal material to form a gate; forming a gate insulation on the base substrate layer to cover the patterned gate; an active layer is formed on the gate insulating layer and located above the gate; a first metal layer, a first metal layer, a A second metal layer and a third metal layer, wherein the first metal layer is made of metal material, the second metal layer is made of nickel or nickel alloy, and the third metal layer is made of copper material ; and patterning the first metal layer, the second metal layer, the third metal layer and the active layer by applying glue, exposing and etching to form patterned source electrodes, drain electrodes and active layers.
[0041] Further, after the step of forming the patterned source electrode, drain electrode and active layer, the method further includes...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
Login to view more
Abstract
The invention discloses a TFT substrate, a preparation method thereof, and a display device, which can make the line width of the copper film layer in the back channel etching-indium gallium zinc oxide type TFT substrate thinner, so that it can be applied to higher resolution At the same time, the molybdenum film layer as the bottom layer of the channel is dry-etched by NF3 and O2 etching gases to prevent the indium gallium zinc oxide film layer from being damaged.
Description
technical field [0001] The present invention relates to the technical field of display, and in particular, to a TFT substrate, a preparation method thereof, and a display device. Background technique [0002] Liquid Crystal Display (LCD) has many advantages such as thin body, power saving, no radiation, etc., and has been widely used, such as: mobile phone, personal digital assistant (PDA), digital camera, computer screen or notebook computer screen etc. [0003] Organic Light-Emitting Diode (OLED) display, also known as organic electroluminescent display, is an emerging flat panel display device, due to its simple preparation process, low cost, low power consumption, high luminous brightness, It has a wide range of working temperature adaptation, light and thin volume, fast response speed, easy to achieve color display and large-screen display, easy to achieve matching with integrated circuit drivers, easy to achieve flexible display and other advantages, so it has broad a...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more