Semiconductor Structure with Material Modification and Low Resistance Plug

Abstract

The present disclosure provides a method of fabricating an integrated circuit (IC) structure. The method includes the steps: patterning a dielectric layer on a semiconductor substrate to form a trench, exposing a conductive feature within the trench; performing an ion implantation process to introduce a doping species into sidewalls of the dielectric layer within the trench, thereby forming a barrier layer on the sidewalls, the barrier layer having a densified structure to effectively prevent inter-diffusion and a modified surface characteristic to boost a bottom-up deposition; and performingthe bottom-up deposition to fill the trench with a metal material, thereby forming a metal plug landing on the conductive feature.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a semiconductor device, and more particularly to a method for forming a metal plug. Background technique [0002] The semiconductor industry has progressed to nanotechnology process nodes for higher device density, higher performance, and lower cost. Along with the above progress, fabrication and design challenges lead to the development of three-dimensional designs, such as FinFET devices. A typical FinFET device is fabricated by extending thin fins or fin structures from a substrate. The fins typically comprise silicon and form the body of the transistor device. The channels of the transistors are formed in this vertical fin. The gate is on the fin (eg wrapping the fin). This form of gate has greater control over the channel. Other advantages of FinFET devices include reduced short channel effects and increased current flow. [0003] However, existing FinFET device structures s...

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Problems solved by technology

Also, filling the contact holes with metal is another challenge or consideration that can create voids or other defects

[0004] Existing FinFET devices are therefore generally suitable for their development purposes, but not in all respects

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