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Preparation method of resistance-controllable silicon carbide ceramic

A technology of silicon carbide ceramics and resistance, which is applied in the field of conductive ceramic materials, can solve the problems of uncontrollable and high resistivity of silicon carbide ceramics, and achieve the effects of reducing resistivity, improving electrical conductivity, and excellent electrical conductivity

Inactive Publication Date: 2020-01-07
山东东大新材料研究院有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing resistance-controllable silicon carbide ceramics to solve the problem that the resistivity of existing silicon carbide ceramics is generally high and cannot be adjusted, so as to achieve the following objectives of the invention:

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Embodiment 1 A resistance controllable silicon carbide ceramic and its preparation method

[0061] A preparation method of resistance controllable silicon carbide ceramics, the steps are as follows:

[0062] (1) According to the mass ratio, SiC powder, B 4 C powder, titanium powder, carbon black, TiB 2 Powder=80:8:20:15:25, mixed with PVA solvent with a mass concentration of 3.0% to form a slurry, and ball milled in a ball mill tank for 12 hours;

[0063] The 3.0% PVA solvent is configured into a solution for the PVA binder and deionized water, and the mass fraction of the PVA binder in the solution is 3.0%;

[0064] The SiC powder, B 4 C powder, titanium powder, carbon black, TiB 2 The mass ratio of the total mass of the powder to the total mass of the 3.0% PVA solvent is 80:100;

[0065] (2) Spray granulation of the ball-milled slurry;

[0066] (3) Put the granulated powder into the mold, and mold it with a press at a pressure of 50 MPa to obtain a green body; ...

Embodiment 2

[0072] Embodiment 2 A resistance controllable silicon carbide ceramic and its preparation method

[0073] A preparation method of resistance controllable silicon carbide ceramics, the steps are as follows:

[0074] (1) According to the mass ratio, SiC powder, B 4 C powder, TiCl 4 , soft white sugar, TiB 2 Powder=65:13:35:32:35, mixed with 5.0% PVB binder-ethanol solution in a ratio of 100:100 to form a slurry, and ball milled in a ball mill tank for 15 hours;

[0075] (2) After the ball-milled slurry is dried in a 60°C drying oven, the powder is manually ground and crushed, and granulated through a 60-mesh sieve;

[0076] (3) Put the granulated powder into the mold, and mold it with a press at a pressure of 100MPa to obtain a green body;

[0077] (4) Put the pressed ceramic green body into a 120°C drying oven to dry and discharge the moisture in the body;

[0078] (5) Put the green body into vacuum sintering, keep it at 1550°C for 90min, and when it reaches the sintering ...

Embodiment 3

[0082] Embodiment 3 A resistance controllable silicon carbide ceramic and its preparation method

[0083] A preparation method of resistance controllable silicon carbide ceramics, the steps are as follows:

[0084] (1) According to the mass ratio, SiC powder, B 4 C powder, Ti powder, graphene, TiB 2 Powder=55:20:50:45:42, mixed with 2.5% phenolic resin binder and medium acetone to form a slurry (can be changed to: 100: 120 to form a slurry), milled in a ball mill tank for 12 hours;

[0085] (2) After the ball-milled slurry is dried in a drying oven at 80°C, the powder is manually ground and crushed, and granulated through a 100-mesh sieve;

[0086] (3) Put the granulated powder into the mold, and mold it with a press at a pressure of 200MPa to obtain a green body;

[0087] (4) Put the pressed ceramic green body into a 250°C drying oven to dry and discharge the moisture in the body;

[0088] (5) Put the green body into vacuum sintering, keep it at 1650°C for 60min, and whe...

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Abstract

The invention relates to a resistance-controllable silicon carbide ceramic and a preparation method thereof, and belongs to the field of conductive ceramic materials. The resistance-controllable silicon carbide ceramic comprises a SiC powder, a B4C powder, a titanium source, a carbon source and a TiB2 powder according to a mass ratio of (40-80):(8-30):(20-70):(15-60):(25-55). The invention also provides the preparation method of the resistance-controllable silicon carbide ceramic. The preparation method comprises the following steps: burdening, sieving and granulating, compression molding, drying and sintering. According to the invention, the TiB2 high-conductivity ceramic component is directly or indirectly introduced into the SiC raw material, so the prepared SiC composite ceramic material has the advantages of controllable resistance, oxidation resistance, high hardness, wear resistance, high thermal conductivity, low thermal expansion coefficient, creep resistance and the like, andhas great practical prospects in the fields of electronic information wearable products, industrial wastewater electrocatalytic oxidation treatment, fuel cell electrodes, high-speed rail pantographsand the like. The preparation method has the advantages of simple process, low device requirement degree, low production cost, and convenience for batch production.

Description

technical field [0001] The invention belongs to the technical field of conductive ceramic materials, in particular to a silicon carbide ceramic material with controllable resistance and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) ceramics have excellent characteristics such as high strength, high hardness, good thermal conductivity, high temperature oxidation resistance, and chemical corrosion resistance, and have been used in industrial fields. However, as a semiconductor material, SiC ceramics usually have poor electrical conductivity due to its high resistivity and uncontrollable properties. Therefore, it can only be used in high-temperature structural parts, wear-resistant, sealing parts, etc., and its electrical properties are not good. However, its huge potential market practical value cannot be fully explored and utilized. [0003] The invention patent with the authorized announcement number CN103613388B provides a low-temperatur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/577C04B35/58C04B35/622C04B35/65
CPCC04B35/565C04B35/58071C04B35/622C04B35/65C04B2235/3813C04B2235/3821C04B2235/3826C04B2235/404C04B2235/424C04B2235/425C04B2235/444C04B2235/48C04B2235/5436C04B2235/5445C04B2235/656C04B2235/6567C04B2235/6581C04B2235/96C04B2235/9684
Inventor 茹红强孙卫康汤志强李庆春王春华
Owner 山东东大新材料研究院有限公司
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