Heat dissipation components and igbt modules

Abstract

The present disclosure relates to a heat dissipation element and an IGBT module. The heat dissipation element includes a heat dissipation base plate and a copper-clad ceramic substrate. The heat dissipation base plate includes an aluminum silicon carbide plate and a heat dissipation column. At least part of the first main surface is covered with a first sprayed copper layer. The heat dissipation column is welded on the surface of the first sprayed copper layer to dissipate heat. The column is a copper-containing heat-dissipating column; the surface of the aluminum silicon carbide plate includes a heat-dissipating column welding area located on the first main surface and a non-heat-dissipating column welding area outside the welding area, and at least the non-heat-dissipating column welding area is covered with a first metal nickel layer , the welding area of ​​the heat dissipation column is covered or not covered with a first metal nickel layer; the copper-clad ceramic substrate includes a ceramic insulating plate, the ceramic insulating plate has a first surface and a second surface arranged oppositely, and the first surface of the ceramic insulating plate is A first copper layer and a second copper layer with different thicknesses are respectively provided on the second surface and the first copper layer, and the first copper layer is bonded and welded on the second main surface of the heat dissipation base plate. The heat dissipation element has good thermal conductivity matching, rapid heat dissipation, and high stability in package use.

Description

technical field [0001] The present disclosure relates to the field of power modules, in particular, to a heat dissipation element and an IGBT module. Background technique [0002] At present, the substrates used for high-power IGBT module packaging are mainly Cu (copper) substrates and AlSiC (aluminum silicon carbon) substrates. Compared with the Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and chip, the thermal stress is smaller, and the specific strength of AlSiC is higher, which can make the module packaging performance more stable and increase the service life. However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). The thermal conductivity of the material is only 150W / (m·K), whi...

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Problems solved by technology

However, the thermal conductivity of the currently prepared AlSiC with high thermal conductivity is 200W / (m·K), which is far behind the thermal conductivity of copper of 380W(m·K), and the heat dissipation pin of the AlSiC base plate is Al (aluminum). Material, heat conduction is only 150W / (m·K), which further limits the efficiency of heat dissipation in contact with coolant

At the same time, in the production process of the existing AlSiC heat dissipation base plate, the Al Pin pin is directly cast and formed through the mold. When the Pin pin is demolded, the mold suffers from large friction force, which is easy to be damaged, and the cost of the mold is relatively high.

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