Method for vertical heteroepitaxy of single crystal metal film on the basis of single crystal copper

Abstract

The invention provides a method for vertical heteroepitaxy of a single crystal metal film on the basis of single crystal copper. According to the method, single crystal copper serves as an epitaxial substrate, metal grows on the epitaxial substrate in an epitaxial mode, and the single crystal metal film is obtained. The metals include, but are not limited to, gold, silver, copper, platinum, palladium, tungsten, iron, chromium, cobalt, and nickel. According to the method provided by the invention, the problems of complexity, small size, difficulty in stripping and extremely high price of a preparation method of the single crystal metal film are solved, and the preparation of the large-size single crystal metal film is realized through a very simple method.

Description

technical field [0001] The invention relates to a method for vertical heteroepitaxial single crystal metal film based on single crystal copper. Background technique [0002] Metal has always occupied a very important position in the development of human history. The Bronze Age and Iron Age that appeared after the Stone Age were marked by the application of metal materials. In modern times, a wide variety of metals are widely used in electrical, light industry, machinery manufacturing, construction industry, defense industry and other fields, which greatly promotes the progress of society. [0003] With the rapid development of the microelectronics industry, the preparation of metal thin films has been widely studied and has become increasingly mature. However, the current methods of preparing metal thin films are mainly deposition or sputtering methods, and the obtained metal thin films are mainly polycrystalline thin films, and the existence of grain boundaries will greatl...

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Problems solved by technology

However, the current methods of preparing metal thin films are mainly deposition or sputtering methods, and the obtained metal thin films are mainly polycrystalline thin films, and the existence of grain boundaries will greatly reduce the properties of metal thin films, such as electrical properties, thermal properties, Mechanical properties, anti-corrosion properties, etc.

Although single crystal metal thin films can be obtained by epitaxy on single crystal substrates, the preparation of single crystal metal thin films cannot be produced on a large scale due to the high price of single crystal substrates, small size, and difficulty in peeling off single crystal metal thin films. Its application is limited

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