A kind of preparation technology of flexible transparent conductive film
A technology of transparent conductive film and preparation process, which is applied to equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, circuits, etc., can solve the problems of large resistance value of conductive film, complex lithography technology and high cost
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[0029] The invention provides a preparation process of a flexible transparent conductive film, and the specific steps of the preparation process include:
[0030] (1) Colloidal solution is evenly coated on the substrate to form a colloidal layer;
[0031] (2) cutting the colloidal layer to form a grid morphology;
[0032] (3) drying the colloidal layer after cutting to make it dry and crack to produce micron-scale crack templates;
[0033] (4) depositing metal on the colloidal layer gained in step (3);
[0034] (5) removing the colloid from the film obtained in step (4) to obtain a flexible transparent conductive film;
[0035] Specifically, in step (2), the depth of cutting the colloidal layer is equal to the thickness of the coated colloidal layer, through the design of the cutting depth equal to the thickness of the colloidal layer, the purpose of cutting through the colloidal layer is realized, so as to realize the subsequent metal deposition process , the metal deposit...
Embodiment 1
[0049] The first embodiment of the present invention provides a preparation process of a flexible transparent conductive film, and the specific steps of the preparation process include:
[0050] (1) Cut a polyethylene terephthalate (PET) film (light transmittance ~ 95%) with a thickness of 100 μm into a rectangular piece of 50cm*60cm, wash it with deionized water and absolute ethanol for 30min, respectively, Dry and use as a base. Prepare TiO with a concentration of 5% 2 weak. TiO with a thickness of 1 μm was sprayed 2 The colloidal solution is evenly applied to the surface of the PET substrate;
[0051] (2) The grid is processed on the colloidal layer by laser cutting colloidal film technology, and the shape of the grid is controlled by computer to be a triangular grid. The processing line spacing is 700 μm, the line width is 100 μm, and the cutting speed of the laser cutting machine is 80mm / s;
[0052] (3) Place the cut colloid film at an air pressure of 1*10 -3 Pa, dry...
Embodiment 2
[0056] The steps of the second embodiment are roughly the same as those of the first embodiment. The difference is that in this embodiment, in step (2), the grid is processed on the colloidal layer by laser cutting colloidal film technology, and the grid shape is a rectangular grid. .
[0057] Embodiment 2 of the present invention provides the same implementation principles and technical effects as Embodiment 1. For brief description, for details not mentioned in this embodiment, reference may be made to the corresponding content in Embodiment 1.
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