Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of zno-ga polymer scintillation conversion screen

A polymer and conversion screen technology, which is applied in the direction of conversion screens, chemical instruments and methods, instruments, etc., can solve the problems of difficult ZnO-Ga crystal processing, difficulty in obtaining ZnO-Ga thin films, poor scintillation performance, etc., to achieve Good scintillation performance, short preparation cycle, optimized scintillation performance

Active Publication Date: 2021-07-06
SHANGHAI UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the crystal is generally very brittle, the polishing process is easy to break the crystal, so the ZnO-Ga crystal processing process is relatively difficult and expensive.
However, the general ZnO-Ga thin film preparation methods, such as: magnetron sputtering method, pulsed laser deposition method, etc., usually obtain ZnO-Ga thin films between tens of nanometers and tens of microns, and the scintillation performance is poor, so it is difficult to obtain ZnO-Ga thin films. Obtain high-quality ZnO-Ga thin films on the order of hundreds of microns

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of zno-ga polymer scintillation conversion screen
  • Preparation method of zno-ga polymer scintillation conversion screen
  • Preparation method of zno-ga polymer scintillation conversion screen

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] In this embodiment, a method for preparing a ZnO-Ga polymer scintillation conversion screen includes the following steps:

[0032] 1) Preparation of ZnO-Ga nanocrystalline powder:

[0033] Take the chemical formula of 1.1780g as Zn(NO 3 ) 2 ·6H 2 O of zinc nitrate hexahydrate and 0.0102g of the chemical formula Ga(NO 3 ) 3 ·xH 2The hydrated gallium nitrate of O is put into 80ml of deionized water, and stirred at room temperature for 30min; then, take 0.5608g of chemical formula C 6 h 12 N 4 Put the hexamethylenetetramine into 80ml of deionized water, and stir for 30min at room temperature; pour the prepared two solutions into the hydrothermal reaction kettle in turn, seal the reaction kettle, put it in a vacuum drying oven, and heat Warm at 120°C for 12 hours to carry out hydrothermal reaction; after cooling down to room temperature, take out the precipitate and wash it with deionized water for 5 times to obtain ZnO-Ga single crystal nanorods;

[0034] 2) Multi...

Embodiment 2

[0041] This embodiment is basically the same as Embodiment 1, especially in that:

[0042] In this embodiment, a method for preparing a ZnO-Ga polymer scintillation conversion screen includes the following steps:

[0043] 1) Preparation of ZnO-Ga nanocrystalline powder:

[0044] The chemical formula of 9.424g is Zn(NO 3 ) 2 ·6H 2 O of zinc nitrate hexahydrate and 0.0818g of the chemical formula Ga(NO 3 ) 3 ·xH 2 The hydrated gallium nitrate of O is put into 80ml of deionized water, and stirred at room temperature for 30min; then, take 4.486g of chemical formula C 6 h 12 N 4 Put the hexamethylenetetramine into 80ml of deionized water, and stir for 30min at room temperature; pour the prepared two solutions into the hydrothermal reaction kettle in turn, seal the reaction kettle, put it in a vacuum drying oven, and heat Heat it at 120°C for 12 hours to carry out hydrothermal reaction; take out the precipitate after cooling down to room temperature, and wash it with deioni...

Embodiment 3

[0051] This embodiment is basically the same as the previous embodiment, and the special features are:

[0052] In this embodiment, a method for preparing a ZnO-Ga polymer scintillation conversion screen includes the following steps:

[0053] 1) Preparation of ZnO-Ga nanocrystalline powder:

[0054] Take the chemical formula of 1.1780g as Zn(NO 3 ) 2 ·6H 2 O of zinc nitrate hexahydrate and 0.0102g of the chemical formula Ga(NO 3 ) 3 ·xH 2 The hydrated gallium nitrate of O is put into 80ml of deionized water, and stirred at room temperature for 30min; then, take 0.5608g of chemical formula C 6 h 12 N 4 Put the hexamethylenetetramine into 80ml of deionized water, and stir for 30min at room temperature; pour the prepared two solutions into the hydrothermal reaction kettle in turn, seal the reaction kettle, put it in a vacuum drying oven, and heat Warm at 150°C for 20 hours to carry out hydrothermal reaction; take out the precipitate after cooling down to room temperature...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
melting pointaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a ZnO-Ga polymer scintillation conversion screen, which can prepare an ultra-fast ZnO-Ga scintillation conversion screen. The present invention utilizes a hydrothermal reaction method to prepare ZnO-Ga nanocrystals, and then mainly adopts resin, polystyrene or plexiglass as organic materials, so that ZnO-Ga nanocrystals are combined with organic materials to prepare ZnO-Ga polymer scintillators . The ZnO-Ga scintillator obtained by using the method of the present invention has no defects and slow components, and the luminescence decay time is tens of nanoseconds, and only the band-gap edge emits ultrafast light, and the luminescence decay time reaches sub-nanoseconds. At the same time, its thickness and diameter can be adjusted conveniently according to actual needs, with strong adaptability and wide application. The method of the invention not only has simple preparation process, low cost and short preparation period, but also has the advantages of good flickering performance and the ability to prepare scintillation conversion screens of various sizes and thicknesses.

Description

technical field [0001] The invention relates to a preparation method of a scintillation material, in particular to a preparation method of a fast-response ZnO-Ga scintillation conversion screen, which is applied in the technical field of scintillation detection and imaging. Background technique [0002] A scintillation material is a material that emits ultraviolet or visible light by absorbing energetic particles or rays. In the fields of high-energy physics, space physics, nuclear physics, nuclear medical imaging, oil well detection, safety inspection, industrial CT and life sciences, the scintillation conversion screen composed of scintillation materials is the best choice for the detection and imaging of X-rays, γ-rays or high-energy particles. Core device. The main indicators for evaluating the performance of scintillation screens include light yield, decay time, spatial resolution, cut-off power, and radiation hardness. Obtaining ultrafast scintillation screens with s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G21K4/00C09K11/62C30B7/10C30B29/10
CPCC09K11/623C30B7/10C30B29/10G21K4/00
Inventor 李乾利杨道龙张志军赵景泰杨云凌袁瑞杨雪纯周玉
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com