Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Detergent for sapphire wafer

A cleaning agent, sapphire technology, applied in the field of cleaning agents, can solve problems such as pollution and poor safety, achieve good water solubility, avoid damage, and improve adhesion

Inactive Publication Date: 2019-12-20
江苏吉星新材料有限公司
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the cleaning solution has strong cleaning ability and good decontamination effect, the fluorine-containing components in the wastewater will pollute the water body and have poor safety.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] A cleaning agent for sapphire wafers, comprising the following components in parts by weight: 10 parts of modified starch, 3 parts of potassium carbonate, 9 parts of surfactants, 15 parts of sodium citrate, 10-15 parts of metatartaric acid, 25 parts of methyl acetate, 1 part of polyethylene glycol, 0.3 part of stabilizer, 30 parts of borax, 5 parts of dibutyl phosphate, 30 parts of deionized water; the modified starch is composed of starch, methyl hydroxypropyl cellulose The molar ratio with nano-graphene is 25:1:4.

[0015] The starch is sweet potato starch; the molecular weight of the starch is 50 million.

[0016] The pore size of the graphene nanometer is 20 μm.

[0017] The preparation method of the above-mentioned cleaning agent can be prepared by referring to the existing cleaning agent, and there are no special steps.

[0018] This cleaning agent is used to clean the sapphire wafers treated by our company. Compared with the cleaning agent of unmodified starch,...

Embodiment 2

[0020] A cleaning agent for sapphire wafers, comprising the following components in parts by weight: 15 parts of modified starch, 4 parts of potassium carbonate, 10 parts of surfactants, 18 parts of sodium citrate, 12 parts of metatartaric acid, acetic acid 30 parts of methyl esters, 2 parts of polyethylene glycol, 0.5 parts of stabilizer, 42 parts of borax, 8 parts of dibutyl phosphate, 35 parts of deionized water; the modified starch is composed of starch, methyl hydroxypropyl cellulose and Nano-graphene is in a molar ratio of 35:1:6.

[0021] The starch is corn starch; the molecular weight of the starch is 1 million.

[0022] The nanographene has a pore diameter of 20-50 μm.

[0023] This cleaning agent is used to clean the sapphire wafers treated by our company. Compared with the cleaning agent of unmodified starch, the water demand is reduced by 24%, and the oil removal rate on the surface of the sapphire wafer is as high as 92%, and there is no scratch on the surface ,...

Embodiment 3

[0025] A cleaning agent for sapphire wafers, comprising the following components in parts by weight: 18 parts of modified starch, 5 parts of potassium carbonate, 12 parts of surfactants, 20 parts of sodium citrate, 10-15 parts of metatartaric acid, 35 parts of methyl acetate, 3 parts of polyethylene glycol, 0.8 part of stabilizer, 50 parts of borax, 10 parts of dibutyl phosphate, 40 parts of deionized water; Described modified starch is made of starch, methyl hydroxypropyl cellulose The molar ratio with nano-graphene is 38:1:8.

[0026] The starch is potato starch; the molecular weight of the starch is 3 million.

[0027] The pore size of the graphene nanometer is 50 μm.

[0028] This cleaning agent is used to clean the sapphire wafers treated by our company. Compared with the cleaning agent of unmodified starch, the water demand is reduced by 15%, and the oil removal rate on the surface of the sapphire wafer is as high as 86%, and there is no scratch on the surface , the re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
pore sizeaaaaaaaaaa
pore sizeaaaaaaaaaa
pore sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a detergent for a sapphire wafer. The detergent comprises the following components in parts by weight: 10-18 parts of a modified starch, 3-5 parts of potassium carbonate, 9-12parts of a surfactant, 15-20 parts of sodium citrate, 10-15 parts of metatartaric acid, 25-35 parts of methyl acetate, 1-3 parts of polyethylene glycol, 0.3-0.8 part of a stabilizer, 30-50 parts of borax, 5-10 parts of dibutyl phosphate and 30-40 parts of deionized water, wherein the modified starch consists of a starch, methyl hydroxy propyl cellulose and nano graphene in a mole ratio of (25-38):1:(4-8). The detergent is simple in component and low in cost, and is capable of both washing off residues of various liquids in a machining process and effectively reducing surface reflection of sapphire.

Description

technical field [0001] The invention belongs to the technical field of cleaning agents, in particular to a cleaning agent for sapphire wafers. Background technique [0002] Sapphire has the advantages of high hardness, high melting point, good light transmission, and stable chemical properties, and is widely used in high-tech fields such as machinery, optics, and information. In the process of production and processing, sapphire needs to go through grinding, polishing and other processes. Diamond liquid will be used in the grinding process, and polishing liquid will be used in the polishing process. If the cleaning is not thorough, it will directly affect the application of the sapphire wafer. [0003] 201310302693.5 discloses a sapphire substrate wafer cleaning solution, preparation method, use and cleaning method. The cleaning solution includes amine oxide surfactants, fluorine-containing surfactants, organic sulfonates, fatty alcohol polyoxyethylene polyoxypropylene E...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C11D3/04C11D3/12C11D3/20C11D3/22C11D3/36C11D3/37C11D3/60
CPCC11D3/046C11D3/12C11D3/2086C11D3/2093C11D3/222C11D3/225C11D3/362C11D3/3707
Inventor 陆昌程宋述远蔡金荣
Owner 江苏吉星新材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com