Method of preparing SOI silicon wafer by adopting rapid heat processing process
A rapid heat treatment, silicon wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high surface roughness of SOI, uneven temperature of silicon wafers, uneven film thickness, etc.
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Embodiment 1
[0025] A method for preparing SOI silicon wafers by using a rapid heat treatment process, which meets the following requirements: it uses silicon wafers as raw materials, and sequentially oxidizes, injects H + and bonding process steps to obtain H + The bonding sheet of the injection layer is split, and then the bonding sheet is cracked by a rapid thermal treatment process (RTP) and a microwave, that is, the desired SOI silicon chip can be obtained.
[0026] The method for preparing SOI silicon wafers using a rapid thermal treatment process meets the following requirements: a rapid thermal treatment process (RTP) single-chip process is used in the splitting process, the temperature is raised to a required temperature not exceeding 480°C, and the temperature is stabilized for 30S-10min. The rate is 10-200°C / S; after or during the rapid thermal treatment (RTP) process, the microwave process is applied to the bonding sheet, and the microwave power range is required to be adjusted...
Embodiment 2
[0038] This embodiment is a method for preparing SOI silicon wafers using RTP plus microwave split technology, and its process flow is as follows figure 1 shown. In this method, silicon wafers are used as raw materials, which are sequentially oxidized and implanted with low doses of H + and bonding process steps to obtain H + The bonding sheet of the injection layer is processed by RTP and microwave split technology with specific process parameters to obtain the required SOI silicon wafer.
[0039] Example 1
[0040] 1. Take an 8-inch P-type silicon wafer, its crystal orientation can be or , and its resistivity can be selected from heavily doped to high resistance.
[0041]2. Prepare an oxide layer (silicon dioxide) on the silicon wafer: oxidize the surface of one side of the silicon wafer in step 1 (or both can be oxidized, according to actual process conditions), and obtain a silicon wafer with an oxide layer (Silicon dioxide is used as the BOX layer of SOI), the oxidat...
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