A kind of preparation method of silicon/nickel-iron-vanadium photoanode

Abstract

The invention discloses a preparing method of a Si / Ni-Fe-V photo-anode. Nickel sulfate, ferrous sulfate and vanadyl sulfate are dissolved in de-ionized water under the atmosphere of inert gas to obtain an electro-deposition solution. Ferrous ions in the solution can be prevented from being oxidized into ferric ions. A sealed silicon photo-anode is immersed into the prepared electro-deposition solution, and the Si / Ni-Fe-V photo-anode is prepared through an electro-deposition method. Ni2+, Fe2+ and V4+ in the electro-deposition solution are reduced into a NiFeV alloy film on the surface of a silicon electrode, and the surface of the silicon anode is wrapped by the NiFeV alloy film, so that a target Si / Ni-Fe-V photo-anode product is obtained. By adopting current density which is 0.8-1.2 mA.cm<-2>, voltage during deposition is far smaller than the redox standard potential of nickel, iron and vanadium, and under-potential co-deposition is realized; and when deposition is carried out at the deposition current density, little hydrogen is produced in the deposition process, the deposited NiFeV alloy film is denser due to the fact that air pores are not prone to forming, and the surface of the silicon anode is better protected. The method is simple and can realize large-scale production.

Description

technical field [0001] The application belongs to the technical field of electrode preparation, and relates to a method for preparing a silicon / nickel-iron-vanadium photoanode. Background technique [0002] As the second most abundant element on the earth, silicon has a wide range of sources. With the maturity of single crystal silicon synthesis technology, it is easy to obtain and low in price, and its bandgap width of 1.12eV is well matched with the sunlight spectrum, and has good performance in the visible light region. Photoresponse, even in the far-infrared light region also has a certain photoresponse, compared with other semiconductor materials, it is more conducive to the maximum utilization of the full spectrum of sunlight, and has been commercialized in the photovoltaic industry. There are huge potential application value in emerging science and technology fields. [0003] However, due to its own "pinning effect", the charge transfer kinetics on the silicon surfac...

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Problems solved by technology

However, these methods have more or less shortcomings. For example, the laser pulse deposition method is not easy to prepare a large-area film, and it is difficult to realize industrial production; the deposition rate of the atomic layer deposition method is too slow, and the thickness of ten cycles can only reach the nanometer level. There is no effective deposition process for materials such as silicon germanium; the gas plasma in the magnetron sputtering process is not stable, which affects the formation of the film; the electron beam evaporation method may cause secondary damage caused by high-energy electrons Secondary electrons may ionize residual gas molecules and may also cause pollution

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