Preparing method of Si/Ni-Fe-V photo-anode
A photoanode, nickel-iron technology, applied in electrodes, electrolysis processes, electrolysis components, etc., can solve the problems of difficult to achieve industrial production, difficult to prepare large-area membranes, unstable plasma, etc., and achieve cheap raw materials and synthesis rate. Controllable, no heavy metal pollution effect
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Embodiment 1
[0042] 1) Add 0.008mol NiSO 4 , 0.001mol FeSO 4 and 0.001mol VOSO 4 Dissolve in 100mL deionized water, and stir under nitrogen purging for 10min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;
[0043] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 3 cm below the surface of the electrodeposition solution A;
[0044] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA cm -2 , the deposition time was 1000s, and the deposition temperature was 20°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30s to obtain a silicon / nickel-iron-vanadium photoanode.
Embodiment 2
[0046] 1) 0.008mol NiSO 4 , 0.001mol FeSO 4 , 0.001mol VOSO 4 Dissolve in 100mL deionized water, and stir under argon purging for 10min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;
[0047] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 4cm below the surface of the electrodeposition solution A;
[0048] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1.2mAcm -2 , the deposition time was 2000s, and the deposition temperature was 8°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 60s to obtain a silicon / nickel-iron-vanadium photoanode.
Embodiment 3
[0050] 1) 0.009mol NiSO 4 , 0.0005mol FeSO 4 , 0.0005mol VOSO 4 Dissolve in 100mL deionized water, and stir under nitrogen purging for 12min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;
[0051] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 4cm below the surface of the electrodeposition solution A;
[0052] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA cm -2 , the deposition time was 60s, and the deposition temperature was 25°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30s to obtain a silicon / nickel-iron-vanadium photoanode.
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