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Preparing method of Si/Ni-Fe-V photo-anode

A photoanode, nickel-iron technology, applied in electrodes, electrolysis processes, electrolysis components, etc., can solve the problems of difficult to achieve industrial production, difficult to prepare large-area membranes, unstable plasma, etc., and achieve cheap raw materials and synthesis rate. Controllable, no heavy metal pollution effect

Active Publication Date: 2019-09-20
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods have more or less shortcomings. For example, the laser pulse deposition method is not easy to prepare a large-area film, and it is difficult to realize industrial production; the deposition rate of the atomic layer deposition method is too slow, and the thickness of ten cycles can only reach the nanometer level. There is no effective deposition process for materials such as silicon germanium; the gas plasma in the magnetron sputtering process is not stable, which affects the formation of the film; the electron beam evaporation method may cause secondary damage caused by high-energy electrons Secondary electrons may ionize residual gas molecules and may also cause pollution

Method used

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  • Preparing method of Si/Ni-Fe-V photo-anode
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  • Preparing method of Si/Ni-Fe-V photo-anode

Examples

Experimental program
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Effect test

Embodiment 1

[0042] 1) Add 0.008mol NiSO 4 , 0.001mol FeSO 4 and 0.001mol VOSO 4 Dissolve in 100mL deionized water, and stir under nitrogen purging for 10min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;

[0043] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 3 cm below the surface of the electrodeposition solution A;

[0044] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA cm -2 , the deposition time was 1000s, and the deposition temperature was 20°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30s to obtain a silicon / nickel-iron-vanadium photoanode.

Embodiment 2

[0046] 1) 0.008mol NiSO 4 , 0.001mol FeSO 4 , 0.001mol VOSO 4 Dissolve in 100mL deionized water, and stir under argon purging for 10min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;

[0047] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 4cm below the surface of the electrodeposition solution A;

[0048] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1.2mAcm -2 , the deposition time was 2000s, and the deposition temperature was 8°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 60s to obtain a silicon / nickel-iron-vanadium photoanode.

Embodiment 3

[0050] 1) 0.009mol NiSO 4 , 0.0005mol FeSO 4 , 0.0005mol VOSO 4 Dissolve in 100mL deionized water, and stir under nitrogen purging for 12min to obtain NiSO 4 , FeSO 4 、VOSO 4 deionized water mixed to obtain electrodeposition solution A;

[0051] 2) Use the silver / silver chloride electrode as the reference electrode, the platinum electrode as the counter electrode, and the sealed silicon photoanode as the working electrode to extend 4cm below the surface of the electrodeposition solution A;

[0052] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA cm -2 , the deposition time was 60s, and the deposition temperature was 25°C; after the electrodeposition was completed, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30s to obtain a silicon / nickel-iron-vanadium photoanode.

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Abstract

The invention discloses a preparing method of a Si / Ni-Fe-V photo-anode. Nickel sulfate, ferrous sulfate and vanadyl sulfate are dissolved in de-ionized water under the atmosphere of inert gas to obtain an electro-deposition solution. Ferrous ions in the solution can be prevented from being oxidized into ferric ions. A sealed silicon photo-anode is immersed into the prepared electro-deposition solution, and the Si / Ni-Fe-V photo-anode is prepared through an electro-deposition method. Ni2+, Fe2+ and V4+ in the electro-deposition solution are reduced into a NiFeV alloy film on the surface of a silicon electrode, and the surface of the silicon anode is wrapped by the NiFeV alloy film, so that a target Si / Ni-Fe-V photo-anode product is obtained. By adopting current density which is 0.8-1.2 mA.cm<-2>, voltage during deposition is far smaller than the redox standard potential of nickel, iron and vanadium, and under-potential co-deposition is realized; and when deposition is carried out at the deposition current density, little hydrogen is produced in the deposition process, the deposited NiFeV alloy film is denser due to the fact that air pores are not prone to forming, and the surface of the silicon anode is better protected. The method is simple and can realize large-scale production.

Description

technical field [0001] The application belongs to the technical field of electrode preparation, and relates to a method for preparing a silicon / nickel-iron-vanadium photoanode. Background technique [0002] As the second most abundant element on the earth, silicon has a wide range of sources. With the maturity of single crystal silicon synthesis technology, it is easy to obtain and low in price, and its bandgap width of 1.12eV is well matched with the sunlight spectrum, and has good performance in the visible light region. Photoresponse, even in the far-infrared light region also has a certain photoresponse, compared with other semiconductor materials, it is more conducive to the maximum utilization of the full spectrum of sunlight, and has been commercialized in the photovoltaic industry. There are huge potential application value in emerging science and technology fields. [0003] However, due to its own "pinning effect", the charge transfer kinetics on the silicon surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/56C25B11/04C25B1/04
CPCC25B1/04C25D3/562C25B1/55C25B11/051C25B11/059C25B11/075Y02E60/36
Inventor 沈少华何凌云
Owner XI AN JIAOTONG UNIV
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