Preparation method of patterned AgNWs/PEDOT:PSS composite conductive lattice thin film

Abstract

The invention provides a preparation method of a patterned AgNWs / PEDOT:PSS composite conductive lattice thin film. The preparation method comprises the steps of S1) preparing a silver nanowire with relatively high length-diameter ratio; S2) preparing AgNWs / PEDOT:PSS composite conductive ink; and S3) preparing the pattered AgNWs / PEDOT:PSS composite conductive lattice thin film. The preparation method is simple, and the patterned AgNWs / PEDOT:PSS composite conductive lattice thin film prepared by silk-screen printing has relatively high transmittance and favorable conductive uniformity; comparedwith a method employing a simple printing material, the conductivity and the adhesion of the thin film are further improved; silk-screen printing to manufacture the uniform thin film belongs to an environmental-friendly and low-cost method and is a technology capable of expanded production; the whole preparation process is simple to operate and is high in repeatability, the conductive lattice thinfilm with different photoelectric properties is achieved by changing the lattice pattern, and the demands of different application occasions are met.

Description

technical field [0001] The invention relates to the technical field of nano conductive materials, in particular to a method for preparing a patterned AgNWs / PEDOT:PSS composite conductive grid film. Background technique [0002] With the successful attempts of cadmium oxide and tin oxide transparent conductive materials in photovoltaic cells and low-emissivity glass in the early 20th century, transparent conductive films have been widely used in touch screens, lighting and display panels, thin film solar cells, wearable devices and other emerging technologies. In flexible optoelectronic devices, it has become one of the indispensable key materials in important fields such as energy, information, and national defense. [0003] The most widely used transparent conductive materials in the market are indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) and fluorine-doped tin oxide (FTO) ceramic-based oxides. Although these oxide films have excellent photoelectric properties, ...

AI Technical Summary

Problems solved by technology

Although graphene has high electron mobility, it is still difficult to prepare large-area high-quality graphene, and there are many defects in the sheet, and the contact resistance between sheets is large. This problem also exists in carbon nanotube-based graphene. In transparent conductive films; conductive polymers have problems such as unstable electrical properties under conditions such as high temperature, high humidity and ultraviolet radiation, and waste of commonly used spin-coating process materials.

The metal nanowires prepared by the liquid phase method not only have good photoelectric properties, but also have excellent compatibility with flexible substrates due to the low-temperature film-forming process, but the uniformity of the film is limited, and a post-processing welding process is required to realize the bonding of the nanowires. The close contact between the electrode patterns will lead to the degradation of the electrode performance due to the destruction of the percolation structure when etching the electrode pattern.

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