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Method for preparing porous boron-doped diamond electrodes using nano-diamond powder as a pseudo-template

A technology of nano-diamond powder and boron-doped diamond, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of high time-consuming cost, complex three-dimensional BDD electrode process, etc., and achieve large chemical double-electrode Layer capacitance, improved repeatability, improved energy density and power density

Active Publication Date: 2021-07-27
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem solved by the present invention is that the process of preparing three-dimensional BDD electrodes in the prior art is complex, time-consuming and costly

Method used

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  • Method for preparing porous boron-doped diamond electrodes using nano-diamond powder as a pseudo-template
  • Method for preparing porous boron-doped diamond electrodes using nano-diamond powder as a pseudo-template
  • Method for preparing porous boron-doped diamond electrodes using nano-diamond powder as a pseudo-template

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] a. Select a negative surface potential, 5 to 10 nm particle diameter nano diamond powder is placed in deionized water for 100 minutes, and a stable diamond flour suspension of 1 g / L is prepared, selecting 20 mm × 20 mm × 0.5mm sizes of silicon After the film, alcohol, deionized water, respectively, washed 15, 15, 10 min, respectively, was dried with nitrogen;

[0051] b. Drop the diamond suspension prepared by step A to the silicon substrate, form a uniform, continuous, flat suspension film, and then heat evaporated in the suspension, nano-diamonds by thermostat heat treatment by hot plate 60 ° C. The powder is self-assembled on the silicon substrate to form a layer of flat porous membrane;

[0052] c. Put the silicon substrate containing the nano-diamond porous porous film prepared in step B into a microwave plasma chemical vapor deposition chamber vacuum to 10 -3 After the PA, turn on the working gas to adjust the gas pressure, turn on the microwave power supply, adjust...

Embodiment 2

[0055] a. Choose a negative surface potential, 30 to 60 nm particle diameter nano diamond powder is placed in deionized water for 100 minutes, and the concentration is 1 g / L stable diamond flour suspension, select 20 mm × 20 mm × 0.5 mm sizes After the film, alcohol, deionized water, respectively, washed 15, 15, 10 min, respectively, was dried with nitrogen;

[0056] b. Drop the diamond suspension prepared by step A to the silicon substrate, form a uniform, continuous, flat suspension film, and then heat evaporated in the suspension, nano-diamonds by thermostat heat treatment by hot plate 60 ° C. The powder is self-assembled on the silicon substrate to form a layer of flat porous membrane;

[0057] c. Put the silicon substrate containing the nano-diamond porous porous film prepared in step B into a microwave plasma chemical vapor deposition chamber vacuum to 10 -3 After the PA, turn on the working gas to adjust the gas pressure, turn on the microwave power supply, adjust the mic...

Embodiment 3

[0060] a. Select a negative surface potential, 5 to 10 nm particle diameter nano diamond powder is placed in deionized water for 100 min, and the stable diamond flour suspension of 1 g / L is prepared, select 20 mm × 20 mm × 0.5mm specification The silicon wafer is made of acetone, alcohol, deionized water, respectively, washed 15, 15, 10 min, respectively, with nitrogen.

[0061] b. Diamond suspension prepared by step A is dropped onto the silicon substrate, form a uniform, continuous, flat suspension film, and then heat evaporated in the suspension, nano-diamonds by thermostatic temperature through hot plate 65 ° C. The powder is self-assembled on the silicon substrate to form a layer of flat porous membrane;

[0062] c. Put the silicon substrate containing the nano-diamond porous porous film prepared in step B into a microwave plasma chemical vapor deposition chamber vacuum to 10 -3 After the PA, turn on the working gas to adjust the gas pressure, turn on the microwave power su...

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Abstract

The invention relates to a method for preparing a porous boron-doped diamond electrode by using nanometer diamond powder as a pseudo template, and belongs to the technical field of electrode material preparation. The technical problem solved by the invention is that the preparation process of the three-dimensional BDD electrode in the prior art is complex, time-consuming and costly. The invention discloses a method for preparing a porous boron-doped diamond electrode using nano-diamond powder as a pseudo-template. The nano-diamond suspension is dropped onto a substrate to form a suspension film, and the suspension film is heated and evaporated, and the nano-diamond powder self-assembles on the substrate. A porous film is formed on the surface, and then placed in a microwave plasma chemical vapor deposition chamber for deposition to obtain a porous boron-doped diamond electrode. The preparation process of the present invention has no template, no adhesive, and no wet etching step, effectively reduces the complexity and cost of the three-dimensional BDD electrode preparation process, improves the repeatability of the preparation, and is beneficial to the large-scale and large-scale preparation of the BDD electrode.

Description

Technical field [0001] In the field of preparation of electrode materials, the present invention relates to a method of preparing porous boron diamond electrodes in a nano-diamond powder as a meter. Background technique [0002] In many known carbon electrode materials, the blended diamond electrode (BDD) has high mechanical strength, low potential window, low background current, good chemical stability, strong corrosion resistance, good biological compatibility and surface is not easy to contaminate, etc. Features, in the field of supercapacitors, electrochemical sensors, electric analysis, sewage treatment, etc. have a wide range of application prospects. However, conventional flat BDD electrodes are low in time and space, and the mass transfer effect is not good, and it is largely limited to the application of the BDD electrode. Increasing the specific surface area of ​​the BDD electrode is the main way to solve the above problems, and can be achieved by preparing a three-dime...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/511C23C16/02C23C16/04C23C16/27
CPCC23C16/0272C23C16/042C23C16/274C23C16/278C23C16/511
Inventor 杜凯汪建何智兵王涛何小珊易泰铭
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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