Up-conversion photo-emission photoelectric transistor and preparation method thereof and application of up-conversion photo-emission photoelectric transistor

A phototransistor and light conversion technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low luminous contrast of devices, reduced device efficiency, high material cost and equipment cost, and achieve high luminous contrast of devices and improved luminous contrast. , the effect of low production cost

Active Publication Date: 2019-09-03
SHENZHEN PLANCK INNOVATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the infrared-to-visible upconversion devices that have been developed are the integration of infrared detectors and organic light-emitting diodes, which mainly have the following problems: (1) In inorganic semiconductor detectors and organic light-emitting diodes, inorganic thin-film materials and organic thin-film materials There will be a large number of defects between the material film interfaces, which will trap photogenerated carriers, resulting in a significant reduction in device efficiency; (2) The film deposition and preparation of the device are all completed in vacuum equipment, and the cost of materials and equipment is high, which is not conducive to Integrate resources to reduce R&D costs; (3) The photogenerated current of the infrared absorbing material is too small, that is, the gain of the current signal is not enough to provide enough current for the light-emitting device connected to it, resulting in a very low light-emitting contrast of the device
[0005] However, in the above solutions, the preparation cost is relatively high, and there are problems of low device efficiency and low luminous contrast.

Method used

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  • Up-conversion photo-emission photoelectric transistor and preparation method thereof and application of up-conversion photo-emission photoelectric transistor
  • Up-conversion photo-emission photoelectric transistor and preparation method thereof and application of up-conversion photo-emission photoelectric transistor

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Embodiment 1

[0075] In this embodiment, an up-conversion light-emitting phototransistor is prepared according to the following method:

[0076] The ITO substrate with the electrode pattern is used as the first transparent conductive electrode to undergo the following ultrasonic cleaning steps: sequentially use acetone, isopropanol, and deionized water for 8 minutes, take it out and dry it for later use. After the dried ITO substrate was treated with ultraviolet ozone for 10 minutes, it was taken out and then spin-coated with ZnO nanoparticles and PbS quantum dots in a nitrogen-filled glove box, wherein the concentrations of ZnO nanoparticles and PbS quantum dots were 30 mg / mL and 50mg / mL, spin at 1500r / min and 2500r / min for 30 seconds, bake at 120°C and 90°C for 10 minutes, respectively, to form a hole blocking layer and an infrared absorbing layer, in which PbS needs to be repeatedly spin-coated 5 layers . The dielectric layer is made of PVP with a concentration of 100mg / mL, spin-coated ...

Embodiment 2

[0082] In this embodiment, an up-conversion light-emitting phototransistor is prepared according to the following method:

[0083] With the ITO sheet whose square resistance is 15 Ω / sq as the substrate (the third transparent conductive electrode), use deionized water, acetone and isopropanol to ultrasonically each for 15 minutes, and then place them in a vacuum oven (O 2 2 O<1p.p.m.), and the dried ITO substrate was treated with plasma for 1 minute. Spin-coat lithium fluoride, ZnO nanoparticles, CdSe / ZnS quantum dots (10 mg / mL in n-hexane) and poly(9,9-dioctylfluorene-CO-N-(4-butyl) sequentially in a glove box Phenyl)diphenylamine) (in chlorobenzene, 8mg / mL), the rotation speed is 2000r / min, 2000r / min, 2500r / min or 3000r / min, and baked at 90°C for 10 minutes, 10 minutes, 10 minutes respectively minutes and 30 minutes to form an electron injection layer, an electron transport layer, a light emitting layer and a hole transport layer. Then spin-coat PEDOT:PSS (3500r / min, 40 sec...

Embodiment 3

[0089] In this embodiment, an up-conversion light-emitting phototransistor is prepared according to the following method:

[0090] The ITO sheet with a square resistance of 15Ω / sq is used as the substrate (the first transparent conductive electrode). Before use, the ITO substrate needs to be thoroughly ultrasonically cleaned in detergent, deionized water, acetone and isopropanol in sequence. The substrate was dried with nitrogen and treated with UV-ozone for 15 minutes. Take out and spin-coat ZnO nanoparticles and carbon nanotubes sequentially in a glove box full of nitrogen, wherein the concentrations of ZnO nanoparticles and carbon nanotubes are 30mg / mL and 60mg / mL, respectively, at 1500r / min and 3000r / min After rotating for 30 seconds, bake at 120°C and 90°C for 10 minutes respectively to form a hole blocking layer and an infrared absorbing layer, in which carbon nanotubes need to be spin-coated repeatedly for 4 layers. The dielectric layer is made of PVP with a concentrat...

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Abstract

The invention discloses an up-conversion photo-emission photoelectric transistor and a preparation method thereof and application of an up-conversion photo-emission photoelectric transistor. The transistor comprises a first transparent conductive electrode, a hole blocking layer, an infrared absorption layer, a dielectric layer, a metal layer, a second transparent conductive electrode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a third transparent conductive electrode which are connected in order. The preparation method comprises the steps of: starting from the first transparent conductive electrode or starting from the third transparent conductive electrode for preparation. The up-conversion photo-emission photoelectric transistor provided by the invention can achieve the conversion from infrared light signals to visible light signals under the action of an external voltage, and has the advantages of high device efficiency, low production cost and high device luminescence contrast.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to a transistor and its preparation method and application, in particular to an up-conversion light-emitting photoelectric transistor and its preparation method and application. Background technique [0002] Infrared light to visible light up-conversion device, as the name suggests, is an optoelectronic device that converts incident infrared light into visible light that can be output. Infrared-to-visible upconversion devices have attracted considerable attention due to their potential applications in low-cost pixelless near-infrared imaging, night vision, biomedicine, and wafer defect detection. Most of the infrared-to-visible upconversion devices that have been developed are the integration of infrared detectors and organic light-emitting diodes, which mainly have the following problems: (1) In inorganic semiconductor detectors and organic light-emitting diodes, inorganic thin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/14H01L31/18
CPCH01L31/145H01L31/18Y02P70/50
Inventor 孙小卫张楠王恺徐冰
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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