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Viscous-elastic material-based processing inductive grinding pad

A grinding pad and viscoelastic technology, applied in the field of grinding pads, can solve problems such as burden, damaged layer, poor surface quality, equipment damage, etc., and achieve the effects of improving processing efficiency, improving grinding accuracy, and increasing grinding speed

Inactive Publication Date: 2019-09-03
嘉兴星微纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Strong oxidant synergistic grinding belongs to traditional grinding based on increasing the corrosion effect of strong oxidant, the processing efficiency and surface quality are better, but the strong oxidant will cause certain damage to the equipment; diamond sand disc grinding, the processing efficiency is greatly improved, but the damage The quality of the layer and surface is poor, which causes a great burden on the subsequent polishing process; plasma erosion grinding, the processing efficiency and surface quality are good, but the equipment is expensive and the operation is complicated, and there is harmful gas generation, which is not conducive to large-scale industrial production
[0005] To sum up, the existing processing technology of difficult-to-process semiconductor materials still needs to be updated and improved, and cannot meet the market demand for difficult-to-process semiconductor materials.

Method used

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  • Viscous-elastic material-based processing inductive grinding pad
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  • Viscous-elastic material-based processing inductive grinding pad

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Hereinafter, the present invention will be described in more detail using examples, but the present invention is not limited to these examples.

[0049] refer to figure 2 Use methyl silicone resin as adhesive 3, add diamond abrasive grains with a particle size of 1 micron as abrasive 4, stir evenly, and fill it on the surface of the non-woven polishing pad to prepare a processing condition-sensitive polishing pad . The material to be ground is a 2-inch SiC substrate. Table 1 below lists the grinding pad grinding conditions:

[0050] Table 1 Processing conditions based on viscoelastic materials Inductive polishing pad grinding conditions

[0051]

[0052] Use processing condition-sensitive grinding pads to grind SiC substrates at different speeds for 1 hour. It can be found that when the rotation speed of the grinding disc is continuously increased, the material removal efficiency is greatly improved, and the surface roughness of the SiC substrate after processing...

Embodiment 2

[0056] as attached image 3 As shown, the material of the adhesive 3 is methyl silicone resin, and diamond abrasive grains with a particle size of 1 micron are added to it, and after stirring evenly, it is filled and coated on the surface of the non-woven polishing pad to prepare a polishing pad with a processing condition induction. . The material to be ground is a 2-inch SiC substrate. Table 2 below lists the grinding pad grinding conditions:

[0057] Table 2 Processing conditions based on viscoelastic materials Induction polishing pad grinding conditions

[0058]

[0059] Using a processing condition-sensitive polishing pad, the SiC substrate was ground for 1 hour under different pressure conditions. It can be found that when the processing pressure increases, the material removal efficiency is significantly improved, and the surface roughness of the SiC substrate after processing can reach about 1nm. It can be seen that the new polishing pad responds strongly to the ...

Embodiment 3

[0063] as attached Figure 4 As shown, the viscoelastic material methyl silicone resin is used, and diamond abrasive grains with a particle size of 1 micron are added to it. After stirring evenly, it is filled and coated on the surface of the non-woven polishing pad to prepare a polishing pad with processing condition sensitivity. The material to be ground is a 2-inch sapphire substrate. Table 3 below lists the grinding pad grinding conditions:

[0064] Table 3 Processing conditions based on viscoelastic materials Induction polishing pad grinding conditions

[0065]

[0066] Using the processing condition induction grinding pad, the sapphire substrate was polished for 1 hour under different speed conditions. It can be found that when the processing speed increases, the material removal efficiency is significantly improved. It can be seen that the new polishing pad also has obvious effects on the processing of sapphire substrates, and increasing the processing speed can al...

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Abstract

The invention relates to the field of abrasive processing, in particular to a grinding pad. The grinding pad comprises a pad body and filler. The filler comprises an adhesive and an abrasive material.The adhesive is made from a viscous-elastic material. The filler is attached to at least part of the pad body. Compared with the prior art, by adhering the abrasive material by means of the viscous-elastic material and arranging the mixed filler to the pad body of the grinding pad, the grinding pad integrates advantages of fixed abrasive particle grinding and free particle grinding, improves theprocessing efficiency, reduces the damage on the surface of a workpiece and improves the grinding precision.

Description

technical field [0001] The invention relates to the field of grinding processing, in particular to a grinding pad. Background technique [0002] Third-generation power semiconductors (SiC, GaN) and next-generation semiconductor substrate materials such as sapphire, GaAs (gallium arsenide), and diamond will be widely used in cutting-edge technologies such as new energy vehicles, high-power electrical appliances, 5G communication networks, and aerospace in the future. field. Due to the excellent electronic properties of the material, the electronic device made of its material has the characteristics of small size and low loss, and can realize high power output; save more than 75% of the current loss in the switching process; realize high-power and stable information transmission, Provide communication support for deep space exploration; according to analysis, next-generation semiconductor materials are expected to fully replace silicon-based semiconductors in high-power, high...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/11B24B37/24
CPCB24B37/11B24B37/245
Inventor 赵盼盼尹永仁
Owner 嘉兴星微纳米科技有限公司
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