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Thermal transistor based on liquid metal phase change

A liquid metal and transistor technology, applied in the field of electronics, can solve the problems of complex processing technology, solid components are not suitable for flexible equipment, etc., to achieve the effect of lowering the production threshold, improving production efficiency and flexibility characteristics, and improving efficiency

Active Publication Date: 2019-08-13
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a thermal transistor based on liquid metal phase transition that overcomes the above problems or at least partially solves the above problems, and solves the problems in the prior art that the processing technology is relatively complicated and solid components are not suitable for flexible devices

Method used

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  • Thermal transistor based on liquid metal phase change
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  • Thermal transistor based on liquid metal phase change

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Such as figure 1 As shown in the figure, a thermal transistor based on liquid metal phase transition is shown, including a package structure 1, a cavity 2 is arranged inside the package structure 1, and liquid metal is arranged in the cavity 2, so Both ends of the cavity 2 are respectively provided with a first contact electrode 31 and a second contact electrode 32, the first contact electrode 31 is connected to a first external electrode 41, and the second contact electrode 32 is connected to a second external electrode 42; A contact electrode 31 is in contact with the liquid metal; a temperature control device 5 is provided outside the package structure 1, and the temperature control device 5 is used to control the temperature of the liquid metal so that the liquid metal undergoes solid-liquid phase transition When it is separated from or in contact with the second contact electrode 32 . Other structures and properties in this embodiment are the same as those of the ...

Embodiment 2

[0032] Such as figure 2 As shown in the figure, a circuit logic control schematic diagram of a series thermal transistor based on liquid metal phase transition is shown. Two liquid metals with different melting points, such as gallium, are respectively placed in the two cavities 2 inside the package structure 1. (Ga, melting point 30°C) and gallium indium alloy (GaIn 24.5, melting point 15°C). Initially, both liquid metals are in a liquid state, only in contact with the first contact electrode 31 and the first external electrode 41 at the bottom, and the circuit is in a disconnected state. When the temperature control device 5 cools the cavity 2 from one side, the Ga with a higher melting point undergoes a solid-liquid phase transition first, and contacts the first contact electrode 32 and the first external electrode 42 at the upper end, and the line is turned on. The other is still disconnected, so the outer circuit is still disconnected. When the temperature is graduall...

Embodiment 3

[0035] Such as image 3 As shown in the figure, a schematic diagram of circuit logic control of a parallel thermal transistor based on liquid metal phase transition is shown. Two liquid metal phase transitions with different melting points are respectively placed in two cavities 2 inside the package structure 1. Materials, such as gallium (Ga, melting point 30°C) and gallium indium alloy (GaIn 24.5 , melting point 15°C). Initially, both liquid metals are in a liquid state, only in contact with the first contact electrode 31 and the first external electrode 41 at the bottom, and the circuit is in a disconnected state. When the temperature control device 5 cools the cavity 2 from one side, the Ga with a higher melting point undergoes a solid-liquid phase transition first, and contacts the second contact electrode 32 and the second external electrode 42 at the upper end, and the line is turned on. The other is still off, so the external circuit is on. When the temperature is g...

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Abstract

The invention provides a thermal transistor based on liquid metal phase change, which comprises a packaging structure, a plurality of cavities are arranged in the packaging structure, liquid metal isarranged in each cavity, and a first contact electrode and a second contact electrode are respectively arranged at two ends of each cavity; the first contact electrode is in contact with the liquid metal; and a temperature control device is arranged outside the packaging structure and is used for controlling the temperature of the liquid metal, so that the liquid metal is separated from or in contact with the second contact electrode during solid-liquid phase change. The low-melting-point liquid metal phase change material has the electrical conductivity of a metal medium and the fluidity of fluid, the density and the electrical conductivity of the low-melting-point liquid metal phase change material change along with the temperature, and the low-melting-point liquid metal phase change material can serve as a circuit switch similar to a semiconductor transistor. By combining a liquid metal direct-writing type printing technology, the thermal transistor electronic circuit is directly printed on any substrate material, the circuit manufacturing efficiency is improved, and the production efficiency and the flexibility of the integrated circuit are improved.

Description

technical field [0001] The invention relates to the field of electronic technology, more specifically, to a thermal transistor based on liquid metal phase transition. Background technique [0002] After decades of rapid development, computers have become an indispensable tool in the information age. From electron tubes and transistors to integrated circuits and VLSIs, the hardware units of computers are constantly being updated, accompanied by significant improvements in computing and storage capabilities. However, in this process, the basic structure of the computer system has not changed, and still follows the von Neumann structure, which is composed of five major components: arithmetic unit, memory, controller, input device, and output device. Current integrated circuit computers generally use semiconductor components as basic units. Using different semiconductor materials, using different processes and geometric structures, a wide variety of semiconductor components wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01H29/06H01H37/64H01H37/32
CPCH01H29/06H01H37/32H01H37/64
Inventor 丁玉杰杨小虎刘静
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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