A (y 1-x ho x ) 2 the si 2 o 7 Solid solution material and preparation method thereof

A y1-xhox, solid solution technology, applied in the field of 2Si2O7 solid solution material and its preparation, can solve the problems of lattice distortion phonon scattering, reduce the thermal conductivity of materials, etc., and achieve the effects of shortened reaction time, convenient operation and excellent high temperature performance

Active Publication Date: 2021-10-22
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

For example, the thermal conductivity of the material can be significantly reduced due to lattice distortion and strong phonon scattering due to solid solution

Method used

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  • A (y <sub>1-x</sub> ho <sub>x</sub> ) <sub>2</sub> the si <sub>2</sub> o <sub>7</sub> Solid solution material and preparation method thereof
  • A (y <sub>1-x</sub> ho <sub>x</sub> ) <sub>2</sub> the si <sub>2</sub> o <sub>7</sub> Solid solution material and preparation method thereof
  • A (y <sub>1-x</sub> ho <sub>x</sub> ) <sub>2</sub> the si <sub>2</sub> o <sub>7</sub> Solid solution material and preparation method thereof

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preparation example Construction

[0022] In the specific implementation process, a kind of (Y of the present invention 1-x Ho x ) 2 Si 2 o 7 Solid solution material and preparation method thereof, the specific steps are as follows:

[0023]1. Preparation of solid solution powder: use the mixed powder of yttrium oxide, holmium oxide and silicon dioxide as raw material, and use ethanol as the medium, perform ball milling and mixing for 8-24 hours to form a slurry; then, dry the slurry and sieve it into powder, Pour it into a crucible, then sinter at high temperature in a muffle furnace, the heating rate is 5-10°C / min, the sintering temperature is 1500-1600°C, and the sintering time is 0.5-1.5 hours, and finally (Y 1-x Ho x ) 2 Si 2 o 7 solid solution powder.

[0024] 2. Preparation of solid solution block: Put the solid solution powder after pressureless sintering into a ball mill jar for ball milling and then dry it, and put the dried solid solution powder into a graphite abrasive tool for cold pressin...

Embodiment 1

[0028] The original particle size of raw material yttrium oxide, holmium oxide and silicon dioxide powder is 600 orders, with 8 grams of yttrium oxide, 3.35 grams of holmium oxide and 5.32 grams of silicon dioxide (molar ratio is (Y 0..8 Ho 0.2 ) 2 Si 2 o 7 ), using ethanol as the medium, ball milling and mixing for 24 hours to form a slurry; then, the slurry was dried and sieved into powder, poured into a crucible, and then carried out high-temperature pressureless sintering in a muffle furnace with a heating rate of 5 °C / min, the sintering temperature is 1550°C, and the sintering time is 0.5 hours, the (Y 0..8 Ho 0.2 ) 2 Si 2 o 7 Solid solution powder, its XRD spectrum is shown in figure 1 , which can be seen as γ-(Y 0.8 Ho 0.2 ) 2 Si 2 o 7 phase, appearance figure 2 .

Embodiment 2

[0030] The original particle size of raw material yttrium oxide, holmium oxide and silicon dioxide powder is 300 orders, with 10 grams of yttrium oxide, 16.73 grams of holmium oxide and 10.65 grams of silicon dioxide (molar ratio is (Y 0.5 Ho 0.5 ) 2 Si 2 o 7 ), using ethanol as the medium, ball milling and mixing for 8 hours to form a slurry; then, the slurry was dried and sieved into powder, poured into a crucible, and then carried out high-temperature pressureless sintering in a muffle furnace with a heating rate of 10°C / min, the sintering temperature is 1580°C, and the sintering time is 1 hour, the (Y 0.5 Ho 0.5 ) 2 Si 2 o 7 solid solution powder.

[0031] Afterwards, put the solid solution powder after pressureless sintering into a ball mill jar for ball milling and then dry it, and put the dried solid solution powder into a graphite abrasive tool for cold pressing, the applied pressure is 5MPa, and the cold pressing time is 15min. Sintered in a hot-press furnac...

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Abstract

The invention relates to the fields of low thermal conductivity and refractory materials, specifically a kind of (Y 1‑x Ho x ) 2 Si 2 o 7 Solid solution materials and methods for their preparation. Synthesized (Y 1‑x Ho x ) 2 Si 2 o 7 The solid solution is the γ phase that can exist stably from room temperature to 1450 °C, where the value of x is in the range of 0 <x<1。首先，以氧化钇、氧化钬和二氧化硅混合粉末作为原料，以乙醇为介质，进行球磨混合8～24h，形成浆料；接着，浆料烘干后筛成粉末，然后在马弗炉中烧结，烧结温度为1500～1600℃，烧结时间为0.5～1.5小时，最后得到(y1‑xHo x ) 2 Si 2 O 7 Solid solution powder. The solid solution powder is loaded into a graphite grinding tool and cold-pressed, and sintered in a hot-pressing furnace with a protective atmosphere to prepare (Y 1‑x Ho x ) 2 Si 2 O 7 Solid solution bulk. The present invention prepares (Y 1‑x Ho x ) 2 Si 2 O 7 solid solution material.

Description

technical field [0001] The invention relates to the fields of low thermal conductivity and refractory materials, specifically a kind of (Y 1-x Ho x ) 2 Si 2 o 7 Solid solution material and preparation method thereof, prepared by pressureless-solid phase reaction method (Y 1-x Ho x ) 2 Si 2 o 7 Solid solution ceramic powder or prepared by hot pressing / solid-liquid phase reaction (Y 1-x Ho x ) 2 Si 2 o 7 Solid solution ceramic block. Background technique [0002] With the rapid development of the aviation industry, high-temperature components are faced with the challenges of more extreme environments. High-temperature structural ceramics such as silicon nitride and silicon carbide and their composite materials have the characteristics of excellent high-temperature strength, good thermal shock resistance, and strong high-temperature creep resistance. They are candidate high-temperature structural materials for aero-engine applications above 1200 °C. However, sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/50C04B35/16C04B35/626
CPCC04B35/16C04B35/50C04B35/626C04B2235/3224C04B2235/3225C04B2235/96C04B2235/9607
Inventor 王京阳吴贞胡万鹏吕熙睿孙鲁超张洁
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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