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Composite thin film and preparation method and application thereof

A composite film and film technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of poor energy level matching relationship and high hole injection barrier, so as to improve device performance and strong applicability And practicability, the effect of improving luminous efficiency

Active Publication Date: 2019-07-09
TCL CORPORATION
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  • Abstract
  • Description
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Problems solved by technology

[0005] The purpose of the present invention is to provide a composite thin film and its preparation method, aiming to solve the poor energy level matching relationship between the nickel oxide hole transport layer and the anode and the quantum dot light-emitting layer in the quantum dot light-emitting diode, resulting in the hole injection potential high barriers

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  • Composite thin film and preparation method and application thereof
  • Composite thin film and preparation method and application thereof
  • Composite thin film and preparation method and application thereof

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Embodiment approach

[0041] Therefore, as a preferred embodiment, the doped metal ion is Mg 2+ and Cu 2+ When, the Mg in the doped metal ion 2+ with Cu 2+ The molar ratio of is 1:1~20:1, more preferably Mg in the described doping metal ion 2+ with Cu 2+ The molar ratio of Mg 2+ :Cu 2+ =1:1~4:1. As a preferred embodiment, the doped metal ion is Mg 2+ and Zn 2+ When, the Mg in the doped metal ion 2+ with Zn 2+ The molar ratio is 1:2 to 20:1, more preferably Mg in the doped metal ion 2+ with Zn 2+ The molar ratio of Mg 2+ :Zn 2+ =1:2~4:1.

[0042] Here, the reason why copper-magnesium ion co-doping or zinc-magnesium ion co-doping is used is that compared with single magnesium ion doping, doping copper ion and zinc ion can improve the loading capacity of nickel oxide material to a certain extent. The carrier mobility, which means that the copper-magnesium ion co-doped nickel oxide material and the zinc-magnesium ion co-doped nickel oxide material have higher electrical conductivity than...

Embodiment 1

[0110] A kind of composite thin film of magnesium ion doping nano-nickel oxide independently, its preparation method comprises the following steps:

[0111] First, an appropriate amount of nickel acetate and magnesium sulfate is added to 50ml distilled water solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 1%. Simultaneously, an appropriate amount of potassium hydroxide powder is dissolved in another part of 50ml distilled water solvent to form a concentration of lye that is 0.3mol / L. Subsequently, the mixed salt solution was heated to 50°C, and potassium hydroxide solution was added dropwise until the pH value of the mixed solution reached 9 and stopped. After the potassium hydroxide solution was dripped, the mixed solution was stirred at 50°C for 1 h to obtain a green turbid solution. The turbid solution was centrifuged at a speed of 7000rpm, and the resulting green precipitate was mixed with 50ml...

Embodiment 2

[0116] A kind of composite thin film of magnesium ion doping nano-nickel oxide independently, its preparation method comprises the following steps:

[0117] First, an appropriate amount of nickel nitrate and magnesium nitrate is added to 50ml distilled water solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 2%. Simultaneously, an appropriate amount of sodium hydroxide powder is dissolved in another part of 50ml distilled water solvent to form a concentration of lye that is 0.3mol / L. Subsequently, the mixed salt solution was kept at room temperature, and sodium hydroxide solution was added dropwise until the pH value of the mixed solution reached 10 and stopped. After the sodium hydroxide solution was dripped, the mixed solution was stirred at room temperature for 30 min to obtain a green turbid solution. The turbid solution was centrifuged at a speed of 7000rpm, and the green precipitate was mixed an...

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Abstract

The invention provides a composite thin film. The composite thin film comprises N layers of thin films which are sequentially stacked and combined, wherein the N layers of thin films are nano-nickel oxide thin films containing doped metal ions, and the doping concentration of the doped metal ions is increased layer by layer from the first-layer thin film to the N(th)-layer thin film; the ionic radius of the doped metal ions is 85%-115% of the radius of Ni<2+>; the valence band energy level of oxide containing the doped metal ions is higher than the valence band energy level of nickel oxide; and the value range of N meets the relation: 3<=N<=9.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite film and its preparation method and application. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have shown great application prospects. Due to its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible applications, QLED has attracted more and more attention in the fields of display technology and solid-state lighting. [0003] At present, in quantum dot light-emitting diodes, organic polymer materials (such as PEDOT:PSS, TFB, etc.) are widely used as hole transport layers due to their high work function, high transmittance, good film formation and good conductivity. . However, due to its high sensitivity to water and oxygen, quantum dot light-emitting diod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/00H10K50/156H10K50/155H10K71/00
Inventor 吴龙佳
Owner TCL CORPORATION
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