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Composite film and its preparation method and application

A composite thin film and thin film technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of high hole injection barrier and poor energy level matching relationship, so as to improve device performance and strong applicability and practicality, to ensure the effect of the blocking effect

Active Publication Date: 2021-03-12
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a composite thin film and its preparation method, aiming to solve the poor energy level matching relationship between the nickel oxide hole transport layer and the anode and the quantum dot light-emitting layer in the quantum dot light-emitting diode, resulting in the hole injection potential high barriers

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  • Composite film and its preparation method and application
  • Composite film and its preparation method and application
  • Composite film and its preparation method and application

Examples

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preparation example Construction

[0047] Correspondingly, an embodiment of the present invention provides a method for preparing a composite film, comprising the following steps:

[0048] S01. Prepare nickel oxide colloidal solutions containing doped metal ions with different doping concentrations, wherein the ionic radius of the doped metal ions is Ni 2+ 85%-115% of the radius; the valence band energy level of the oxide doped with metal ions is deeper than the valence band energy level of nickel oxide;

[0049] S02. Provide a substrate, and sequentially deposit the nickel oxide colloidal solution containing doped metal ions on the substrate according to the order of the doping concentration of the doped metal ions from small to large or from large to small, to prepare doped metal ions. The N layer whose doping concentration of heterometal ions is increased or decreased layer by layer contains a nano-nickel oxide film doped with metal ions to obtain a composite film, wherein the value range of N satisfies: 3≤N...

Embodiment 1

[0110] A kind of composite thin film of magnesium ion doping nano-nickel oxide independently, its preparation method comprises the following steps:

[0111] First, an appropriate amount of nickel acetate and magnesium sulfate is added to 50ml of distilled water solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 1%. At the same time, an appropriate amount of potassium hydroxide powder is dissolved in another 50ml of distilled water solvent to form a lye with a concentration of 0.3mol / L. Then the mixed salt solution was heated to 50° C., and potassium hydroxide solution was added dropwise until the pH value of the mixed solution reached 9 and stopped. After the infusion of the potassium hydroxide solution was completed, the mixed solution was stirred at 50° C. for 1 h to obtain a green turbid solution. The turbid solution was centrifuged at a speed of 7000 rpm, and the obtained green precipitate was mix...

Embodiment 2

[0116]A kind of composite thin film of magnesium ion doping nano-nickel oxide independently, its preparation method comprises the following steps:

[0117] First, an appropriate amount of nickel nitrate and magnesium nitrate is added to 50ml of distilled water solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 2%. At the same time, an appropriate amount of sodium hydroxide powder is dissolved in another part of 50ml distilled water solvent to form a lye with a concentration of 0.3mol / L. Then the mixed salt solution was kept at room temperature, and sodium hydroxide solution was added dropwise until the pH value of the mixed solution reached 10 and stopped. After the instillation of the sodium hydroxide solution was completed, the mixed solution was stirred at room temperature for 30 min to obtain a green turbid solution. The cloudy solution was centrifuged at a speed of 7000 rpm, and the obtained gree...

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Abstract

The invention provides a composite film, which comprises sequentially laminated and bonded N-layer films, and the N-layer films are nano-nickel oxide films containing doped metal ions, and from the first layer to the Nth layer film, the doping concentration of the doped metal ions increases layer by layer, wherein the ionic radius of the doped metal ions is Ni 2+ 85%-115% of the radius; the valence band energy level of the oxide doped with metal ions is deeper than the valence band energy level of nickel oxide; the value range of N satisfies: 3≤N≤9.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite film and its preparation method and application. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have shown great application prospects. Due to its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible applications, QLED has attracted more and more attention in the fields of display technology and solid-state lighting. [0003] At present, in quantum dot light-emitting diodes, organic polymer materials (such as PEDOT:PSS, TFB, etc.) are widely used as hole transport layers due to their high work function, high transmittance, good film formation and good conductivity. . However, due to its high sensitivity to water and oxygen, quantum dot light-emitting diod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/00H10K50/156H10K50/155H10K71/00
Inventor 吴龙佳
Owner TCL CORPORATION
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