Charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and fabrication method thereof

A photodetector and perovskite technology, applied in the field of photoelectric detection, can solve the problems of perovskite photodetector half-wave peak width and no wavelength selection, and achieve improved detection performance, low recombination loss, and reduced half-wave peak width Effect

Active Publication Date: 2019-06-18
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The object of the present invention is: in order to solve the half-wave peak width of the perovskite photodetector and the problem of no wavelength selection, a kind of perovskite photodetector with vertical energy band gradient based on the charge narrowing absorption effect is provided and its Preparation

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  • Charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and fabrication method thereof
  • Charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and fabrication method thereof

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Embodiment 1

[0041] A perovskite photodetector with a vertical energy band gradient based on the charge narrowing absorption effect, comprising a glass substrate 1 coated with a first transparent conductive electrode layer 2, the first transparent conductive electrode Layer 2 is sequentially spin-coated with a first hole transport layer 3, a perovskite sensitive layer a4, and a first electron transport layer 5 from bottom to top, and the first electron transport layer 5 is sequentially coated with a first electron transport layer from bottom to top. A hole blocking layer 6, a second transparent conductive electrode layer 7, the second transparent conductive electrode layer 7 is sequentially spin-coated with a second hole transport layer 8, a perovskite sensitive layer b 9, a second electron The transport layer 10 and the second electron transport layer 10 are sequentially coated with a second hole blocking layer 11 and a third transparent conductive electrode layer 12 from bottom to top, an...

Embodiment 2

[0069] On the basis of embodiment 1, the difference between this embodiment and embodiment 1 is that the thickness of perovskite sensitive layer a, perovskite sensitive layer b and perovskite sensitive layer c is 1500nm, and a new Mixing ratios to prepare perovskite precursor solution a, perovskite precursor solution b and perovskite precursor solution c.

[0070] Dissolve methylamine lead chloride in DMF (N-N dimethylformamide) solution, and stir at 100°C for 6 hours to obtain perovskite precursor solution a; : 2 was dissolved in DMF (N-N dimethylformamide) solution, after stirring at 100°C for 6h, the perovskite precursor solution b was obtained; methylamine lead bromine was dissolved in DMF (N-N dimethylformamide) solution In , after stirring at 100°C for 6 h, the perovskite precursor solution c was obtained.

[0071] Under standard test conditions, the light beam is drawn from the light source, so that the incident light 18 is vertically incident on the perovskite photode...

Embodiment 3

[0073] On the basis of embodiment 1, the difference between this embodiment and embodiment 1 is that the thickness of perovskite sensitive layer a, perovskite sensitive layer b and perovskite sensitive layer c is 800nm, and a new Mixing ratios to prepare perovskite precursor solution a, perovskite precursor solution b and perovskite precursor solution c.

[0074] Dissolve methylamine lead iodide and methylamine lead bromide in a DMF (N-N dimethylformamide) solution at a molar ratio of 1.4:0.6, and dope with PEIE at a mass ratio of 0.33%, and stir at 100°C for 6h to obtain Perovskite precursor solution a; methylamine lead iodide and methylamine lead bromine are dissolved in DMF (N-N dimethylformamide) solution according to the molar ratio of 1:2, and doped with PEIE of 0.33% mass ratio, in After stirring at 100°C for 6 hours, the perovskite precursor solution b was obtained; methylamine lead iodide and methylamine lead bromide were dissolved in DMF (N-N dimethylformamide) solut...

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Abstract

The invention discloses a charge narrowing absorption effect-based perovskite photoelectric detector having vertical energy gap gradient and a fabrication method thereof. The perovskite photoelectricdetector comprises a glass substrate, a first transparent conductive electrode layer, a first hole transmission layer, a perovskite sensitive layer a, a first electron transmission layer, a first holeblocking layer, a second transparent conductive electrode layer, a second hole transmission layer, a perovskite sensitive layer b, a second electron transmission layer, a second hole blocking layer,a third transparent conductive electrode layer, a third hole transmission layer, a perovskite sensitive layer c, a third electron transmission layer, a third hole blocking layer, a metal electrode layer. By the perovskite photoelectric detector, the half-wave peak width of the optical detector is effectively narrowed, the detection performance of the perovskite optical detector is improved, lightwaves of three different bands can be simultaneously detected, moreover, the fabrication method is simple and effective and is suitable for mass production.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a perovskite photodetector with vertical energy band gradient based on charge narrowing absorption effect and a preparation method thereof. Background technique [0002] A photodetector is a device that detects and measures the properties of light through the photoelectric effect, usually in the form of a photocurrent, through which the corresponding information of the detected light wave can be deduced. Photodetectors are widely used in various aspects, including surveillance imaging, surveying and mapping detection, environmental monitoring and biochemical medicine, etc. At present, optical detectors are mainly divided into four categories, namely, organic material detectors, inorganic material detectors, quantum dot material detectors, and perovskite material detectors. Although the technology of the first three types of detectors is relatively mature, they have problem...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 黄江张磊宛晨侯思辉
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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