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A trench-gate bipolar transistor with low emi noise

A bipolar transistor and trench gate technology, applied in semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve problems such as increasing device electromagnetic interference noise, affecting device reliability, and large induced electromotive force. , to achieve the effect of reducing electromagnetic noise interference, reducing process cost, and reducing process difficulty

Active Publication Date: 2022-04-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Claims
  • Application Information

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Problems solved by technology

However, this method will increase the dV / dt and dI / dt when the device is turned on, thereby generating a large induced electromotive force, increasing the electromagnetic interference (EMI) noise of the device, and affecting the reliability of the device

Method used

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  • A trench-gate bipolar transistor with low emi noise
  • A trench-gate bipolar transistor with low emi noise
  • A trench-gate bipolar transistor with low emi noise

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0015] A trench-gate bipolar transistor with low EMI noise, the structure of which is as figure 1 shown; including collector structure, drift region structure, hole barrier layer structure, emitter structure and slot gate structure; said collector structure includes metallized collector 1 and P located on the upper surface of metallized collector 1 Collector region 2; the drift region structure includes an N buffer layer 3 and an N drift region layer 4 located on the upper surface of the N buffer layer 3, and the N buffer layer 3 is located on the upper surface of the P collector region 2; the empty The hole barrier layer structure is composed of carrier storage (CS) layer 12, P region 5 and N region 6, the hole barrier layer structure is located on the upper surface of the drift region, and the P region 5 and N region 6 appear alternately along the horizonta...

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Abstract

The invention belongs to the technical field of semiconductor devices, and in particular relates to a trench-gate bipolar transistor with low EMI noise. The main scheme of the present invention: based on the conventional carrier storage tank gate bipolar transistor (CSTBT) structure, the hole barrier layer structure is introduced into the device and placed between the drift region structure and the emitter structure. Each region of the hole barrier layer structure is a shallow junction structure, which can be formed by epitaxial technology, or by ion implantation or diffusion technology. Its length, width and doping concentration can be designed according to the actual device performance requirements. When the device is turned on, the device forms a lateral hole barrier layer near the bottom of the gate through the depletion of the lateral P / N junction, so that the charging effect of the hole current on the gate capacitance is greatly weakened, which greatly increases the device's performance. The gate control capability also reduces the EMI noise of the device. Therefore, the present invention has extremely low electromagnetic interference (EMI) noise and low power consumption.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a trench-gate bipolar transistor (Trench Insulated Gate Bipolar Transisitor, TIGBT for short) with low EMI noise. Background technique [0002] High-voltage power semiconductor devices are an important part of power electronics, and have a wide range of applications in fields such as motor drives in power systems and frequency conversion in consumer electronics. The traditional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as: IGBT) has been widely used due to its superior performance in the field of medium and high voltage power electronics. However, IGBTs have trade-off optimization among energy consumption parameters such as turn-on energy consumption, turn-on energy consumption, and turn-off energy consumption. H.Takahashi et al first proposed a new groove gate IGBT structure - CSTBT structure on ISPSD`96proceedings. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L23/552
Inventor 陈万军许晓锐王方洲刘超张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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