Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A trench-gate bipolar transistor with low EMI noise characteristics

A bipolar transistor and interference noise technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of large electromagnetic interference noise and affect the reliability of devices, so as to reduce electromagnetic noise interference, reduce power loss, increase The effect of the short-circuit safe working area

Active Publication Date: 2021-03-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the IGBT (Floating-P IGBT) with floating pseudo-cells has too much electromagnetic interference noise during the turn-on process, which affects the reliability of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A trench-gate bipolar transistor with low EMI noise characteristics
  • A trench-gate bipolar transistor with low EMI noise characteristics
  • A trench-gate bipolar transistor with low EMI noise characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0016] A novel trench-gate bipolar transistor proposed by the present invention has a schematic structure as shown in figure 1 , which greatly reduces the electromagnetic noise interference when the IGBT is turned on, and at the same time reduces the power loss of the IGBT and increases the short-circuit safe working area of ​​the IGBT. The main scheme of the present invention is to adopt cellular regions and pseudo-cellular regions arranged alternately in the horizontal direction, and the cellular regions and pseudo-cellular regions are connected through metallized emitters, so that the pseudo-cellular regions do not float; secondly, the P-type semiconductor strips It is connected with the metallized emitter through the floating ohmic contact and the polysilicon diode structure, and the potential of the P-type semiconductor strip is clamped.

[0017] A trenc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of semiconductor devices and relates to a trench gate bipolar transistor with a low-electromagnetic interference noise characteristic. According to the main technical schemes of the present invention, a structure in which cell regions and dummy cell regions are alternately arranged in a horizontal direction is adopted, the dummy cell regions are connected with a metallized emitter and are not suspended; and the upper surfaces of the dummy cell regions vertically extend into the device, so that polysilicon diode structures are formed, and P-type semiconductor strips and the metallized emitter can be connected together through floating ohmic contacts and the polysilicon diode structures, and therefore, the potentials of the P-type semiconductor strips can be clamped. When the device is turned on, a charging effect of hole current on gate capacitance is greatly weakened, therefore, the gate control capability of the device is greatly increasedwith the electromagnetic interference noises of the device reduced; when the device is turned on, the diodes clamp the potentials of the P-type semiconductor strips, so as to suppress the extraction effect of the potentials on holes, and therefore, the conductance modulation effect of the device can be enhanced, and conduction voltage drop can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a trench-gate bipolar transistor (Trench Insulated Gate Bipolar Transisitor, TIGBT for short) with low electromagnetic interference noise characteristics. Background technique [0002] High-voltage power semiconductor devices are an important part of power electronics, and have a wide range of applications in fields such as motor drives in power systems and frequency conversion in consumer electronics. In applications, high-voltage power semiconductors need to have characteristics such as low power loss, high short-circuit resistance, and low electromagnetic interference noise. The traditional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as: IGBT) has been widely used due to its superior performance in the field of medium and high voltage power electronics. However, as a bipolar device, the key parameters of the IGBT lead to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/423H01L21/331H01L29/739
CPCH01L29/0611H01L29/4236H01L29/66348H01L29/7397
Inventor 陈万军许晓锐王园刘超张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com