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Trench insulated gate bipolar transistor

A technology of bipolar transistors and slot gates, applied in semiconductor devices, electrical components, circuits, etc., to achieve the effects of reducing electromagnetic noise interference, increasing short-circuit safe working area, and reducing power loss

Active Publication Date: 2019-06-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is still a lot of room for optimization in all aspects of Fin-P IGBT

Method used

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  • Trench insulated gate bipolar transistor
  • Trench insulated gate bipolar transistor
  • Trench insulated gate bipolar transistor

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Embodiment Construction

[0014] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0015] A novel trench-gate bipolar transistor proposed by the present invention has a schematic structure as shown in figure 1 , which greatly reduces the electromagnetic noise interference when the IGBT is turned on, and at the same time reduces the power loss of the IGBT and increases the short-circuit safe working area of ​​the IGBT. The main scheme of the present invention is to adopt alternately arranged cellular regions and pseudo-cellular regions in the horizontal direction, and the semiconductor on the side near the emitter in the pseudo-cellular region is floating; secondly, the upper surface of the pseudo-cellular vertically extends into the device to form a groove For the T-shaped emitter of the structure, the number, width, and filling of the trench structure are designed according to the actual requirements of the device.

[0016] A trench-gate b...

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a trench insulated gate bipolar transistor. According to the main scheme provided by the invention, astructure that a cellular area and a pseudo-cellular area are alternately arranged in the horizontal direction is adopted; the pseudo-cellular area is connected with the cellular area through a metalized emitting electrode, and a semiconductor on one side, close to the emitting electrode, of the pseudo-cellular area is floating; and then, a groove structure, which is in short circuit connection with the emitting electrode, is formed by vertically extending the upper surface of the pseudo cell into a device, so that an effect of a uniform electric field is achieved. The transistor disclosed bythe invention has extremely low power loss. When the device is subjected to short circuit impact, the device provided by the invention has more uniform electric field distribution, so that the impactionization rate of the device is lowered, the heat failure of the device is inhibited, and the device has stronger anti-short-circuit capability.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a trench gate bipolar transistor (Trench Insulated Gate Bipolar Transisitor, TIGBT for short). Background technique [0002] High-voltage power semiconductor devices are an important part of power electronics, and have a wide range of applications in fields such as motor drives in power systems and frequency conversion in consumer electronics. In applications, high-voltage power semiconductors need to have characteristics such as low power loss, high short-circuit resistance, and low electromagnetic interference noise. The traditional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as: IGBT) has been widely used due to its superior performance in the field of medium and high voltage power electronics. However, as a bipolar device, the key parameters of the IGBT lead to There is a trade-off between turn-on voltage drop and turn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/417H01L29/739
Inventor 陈万军许晓锐陈楠刘超张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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